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<p>High-temperature europium diffusion into phosphorus-doped high-resistivity KEF-80 Si(100) was studied by XRD/WPPF, Raman spectroscopy, SEM/EDS and impedance spectroscopy (10 Hz–1&#xa0;MHz, 38–635&#xa0;°C). The study correlates preservation of the crystalline Si matrix with weak Eu-related near-surface modification with possible oxide/barrier contributions and effective impedance behavior. XRD/WPPF shows that Si remains the dominant crystalline phase (99.37(7) wt%, <i>a</i> = 5.43158&#xa0;Å), while weak secondary reflections are treated qualitatively because of their low fraction and peak overlap. Raman spectra retain the Si(TO) mode near 521&#xa0;cm⁻<sup>1</sup> and show local background variations. SEM reveals a roughened non-uniform surface, and EDS detects an Eu-related signal in the analyzed near-surface region. EIS shows strong frequency- and temperature-dependent dispersion of <i>R</i>, <i>C</i><sub>s</sub> and apparent dielectric parameters. The high apparent <i>ε</i>′ values are attributed to sample-contact and interfacial polarization rather than intrinsic Si permittivity. Maxwell–Wagner–Sillars-type polarization is discussed as a physically consistent interpretation of the low-frequency response within the stated experimental limitations.</p>

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High-temperature Eu diffusion in KEF-80 silicon: XRD, Raman, SEM/EDS and impedance evidence of near-surface structural heterogeneity and apparent interfacial polarization

  • 期刊论文

  • 发表日期：

    2026年6月17日

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  • S. O. Saidov,
  • G. Kh. Mavlonov,
  • Y. A. Abduganiev,
  • N. Yu. Sharibaev,
  • I. O. Kosimov,
  • A. K. Ergashov

摘要

High-temperature europium diffusion into phosphorus-doped high-resistivity KEF-80 Si(100) was studied by XRD/WPPF, Raman spectroscopy, SEM/EDS and impedance spectroscopy (10 Hz–1 MHz, 38–635 °C). The study correlates preservation of the crystalline Si matrix with weak Eu-related near-surface modification with possible oxide/barrier contributions and effective impedance behavior. XRD/WPPF shows that Si remains the dominant crystalline phase (99.37(7) wt%, a = 5.43158 Å), while weak secondary reflections are treated qualitatively because of their low fraction and peak overlap. Raman spectra retain the Si(TO) mode near 521 cm⁻1 and show local background variations. SEM reveals a roughened non-uniform surface, and EDS detects an Eu-related signal in the analyzed near-surface region. EIS shows strong frequency- and temperature-dependent dispersion of R, Cs and apparent dielectric parameters. The high apparent ε′ values are attributed to sample-contact and interfacial polarization rather than intrinsic Si permittivity. Maxwell–Wagner–Sillars-type polarization is discussed as a physically consistent interpretation of the low-frequency response within the stated experimental limitations.