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<p>Transition metal chalcogenide WTe<sub>2</sub>, a prototypical type-II Weyl semimetal, exhibits a large and non-saturating magnetoresistance (MR), which is widely attributed to the electron–hole compensation mechanism. However, conventional two-band models rely on a priori assumptions about carrier types and their specific numbers, leading to inaccurate fitting of transport data. Here, we investigate the gate-tunable magnetotransport properties of WTe<sub>2</sub> thin films via ionic-liquid gating and maximum entropy mobility spectrum (MEMS) analysis. At 2&#xa0;K, the MR shows a non-monotonic dependence on gate voltage (<i>V</i><sub><i>g</i></sub>), reaching a maximum of 3107% at <i>V</i><sub><i>g</i></sub> = − 1&#xa0;V. MEMS decomposes the measured transport data into distinct electron (<i>μ</i> &lt; 0) and hole (<i>μ</i> &gt; 0) peaks, revealing that the MR maximum corresponds to an almost perfect charge compensation state. Our work validates the electron–hole compensation mechanism for giant MR in WTe<sub>2</sub> and demonstrates MEMS as a powerful tool for multi-carrier dynamics analysis, paving the way for the design of gate-tunable magnetoresistive devices.</p>

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Maximum entropy mobility spectroscopy analysis for gate-tuned magnetotransport properties in WTe2 thin films

  • 期刊论文

  • 发表日期：

    2026年6月14日

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  • Jianchao Meng,
  • Xiaoxuan Tian,
  • Xiurong Feng,
  • Guangwei Wang,
  • He Hao

摘要

Transition metal chalcogenide WTe2, a prototypical type-II Weyl semimetal, exhibits a large and non-saturating magnetoresistance (MR), which is widely attributed to the electron–hole compensation mechanism. However, conventional two-band models rely on a priori assumptions about carrier types and their specific numbers, leading to inaccurate fitting of transport data. Here, we investigate the gate-tunable magnetotransport properties of WTe2 thin films via ionic-liquid gating and maximum entropy mobility spectrum (MEMS) analysis. At 2 K, the MR shows a non-monotonic dependence on gate voltage (Vg), reaching a maximum of 3107% at Vg = − 1 V. MEMS decomposes the measured transport data into distinct electron (μ < 0) and hole (μ > 0) peaks, revealing that the MR maximum corresponds to an almost perfect charge compensation state. Our work validates the electron–hole compensation mechanism for giant MR in WTe2 and demonstrates MEMS as a powerful tool for multi-carrier dynamics analysis, paving the way for the design of gate-tunable magnetoresistive devices.