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<p>Nickel-doped tin oxide nanoparticles (Ni-doped SnO<sub>2</sub> NPs) have attracted great interest for applications in sensors, photocatalysis, and optoelectronic properties, whereas their&#xa0;theoretical&#xa0;radiation protection potential has not yet been explored. In this study, structural and optical properties as well as radiation shielding activity of Ni-doped SnO<sub>2</sub> NPs with various concentrations of Ni (0.00–0.08 wt%) were synthesized via a sol-gel route. The structural analysis verified the incorporation of Ni<sup>2+</sup> into the SnO<sub>2</sub> lattice without changing its tetragonal rutile phase, where the crystallite size calculated based on the Scherrer formula was systematically reduced from 19.37&#xa0;nm to 12.65&#xa0;nm with increasing Ni content. Optical studies showed the gradual decrease of direct (3.48&#xa0;eV to 3.20&#xa0;eV) and indirect (2.52&#xa0;eV to 2.01&#xa0;eV) band gaps, higher absorption in the visible region, and greater refractive index as a function of doping. The calculated radiation shielding parameters (using Phy-X/PSD software) predict that the mass attenuation coefficient (G<sub>MAC</sub>) decreases from 37.128 to 8.473 cm<sup>2</sup>/g (at 0.015&#xa0;MeV) as Ni content increases for the SON-0.00 sample to 7.993 cm<sup>2</sup>/g for SON-0.08 with increasing Ni concentration in Ni-doped SnO<sub>2</sub> NPs. At an energy level of 0.03&#xa0;MeV, sample SON-0.00 exhibited the highest linear attenuation coefficient (G<sub>LAC</sub>) value of 226.828&#xa0;cm<sup>−1</sup>, while the lowest G<sub>LAC</sub> value was observed for sample SON-0.08. Additionally, the half-value layer (G<sub>HVL</sub>) increased with the incorporation of Ni into the Ni-doped SnO<sub>2</sub> NPs. Taken together, the results demonstrate that Ni doping sensitively adjusts the structural, optical, and functional characteristics of SnO<sub>2</sub> NPs, making them appropriate candidates for both radiation shielding materials and tunable opto-electronic devices.</p>

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Effect of Ni doping on the structural, optical, and radiation shielding properties of SnO2 nanoparticles

  • 期刊论文

  • 发表日期：

    2026年6月23日

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  • B. M. Alotaibi,
  • Ahmed M. Hassan,
  • Ahmed S. Ali,
  • Hesham M. H. Zakaly

摘要

Nickel-doped tin oxide nanoparticles (Ni-doped SnO2 NPs) have attracted great interest for applications in sensors, photocatalysis, and optoelectronic properties, whereas their theoretical radiation protection potential has not yet been explored. In this study, structural and optical properties as well as radiation shielding activity of Ni-doped SnO2 NPs with various concentrations of Ni (0.00–0.08 wt%) were synthesized via a sol-gel route. The structural analysis verified the incorporation of Ni2+ into the SnO2 lattice without changing its tetragonal rutile phase, where the crystallite size calculated based on the Scherrer formula was systematically reduced from 19.37 nm to 12.65 nm with increasing Ni content. Optical studies showed the gradual decrease of direct (3.48 eV to 3.20 eV) and indirect (2.52 eV to 2.01 eV) band gaps, higher absorption in the visible region, and greater refractive index as a function of doping. The calculated radiation shielding parameters (using Phy-X/PSD software) predict that the mass attenuation coefficient (GMAC) decreases from 37.128 to 8.473 cm2/g (at 0.015 MeV) as Ni content increases for the SON-0.00 sample to 7.993 cm2/g for SON-0.08 with increasing Ni concentration in Ni-doped SnO2 NPs. At an energy level of 0.03 MeV, sample SON-0.00 exhibited the highest linear attenuation coefficient (GLAC) value of 226.828 cm−1, while the lowest GLAC value was observed for sample SON-0.08. Additionally, the half-value layer (GHVL) increased with the incorporation of Ni into the Ni-doped SnO2 NPs. Taken together, the results demonstrate that Ni doping sensitively adjusts the structural, optical, and functional characteristics of SnO2 NPs, making them appropriate candidates for both radiation shielding materials and tunable opto-electronic devices.