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<p>Zinc phthalocyanine (ZnPc) thin films are introduced as an interfacial layer to tailor the electrical properties of Au/n-ZnO Schottky diode (SD), resulting in the formation of Au/ZnPc/n-ZnO heterojunction (HJ) diode. The surface topology, structural integrity, chemical and optical possessions of the thermally evaporated ZnPc films are explored by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and UV–Vis spectroscopy. Optical absorption measurements reveal a band gap of 3.18&#xa0;eV. The electrical and charge transport properties of the SD and HJ diodes are investigated using I-V measurements. The HJ exhibits a greater rectification ratio, 387.88, and lower reverse leakage current, 1.54 × 10<sup>–10</sup> A, than the SD (3.04 and 1.74 × 10<sup>–7</sup> A). A higher barrier height (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\Phi_{b}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="normal">Φ</mi> <mi>b</mi> </msub> </math></EquationSource> </InlineEquation>) of 0.90&#xa0;eV is obtained for the HJ compared with the SD (0.73&#xa0;eV), demonstrating that the ZnPc interlayer effectively modifies the M-S interface. The Φ<sub>b</sub>, ideality factor (n) and series resistance (R<sub>S</sub>) of the SD and HJ are extracted using forward-bias I-V, Z(V)-V<sub>d</sub> plot, Cheung’s functions and Norde’s methods. The interface state density (N<sub>SS</sub>) of the HJ (7.46 × 10<sup>11</sup> eV<sup>−1</sup>&#xa0;cm<sup>−2</sup>) is less than that of the SD (1.49×10<sup>12</sup> eV<sup>−1</sup> cm<sup>−2</sup>), indicating effective passivation of the ZnO surface by the ZnPc interlayer. The Poole Frenkel emission controls the reverse current conduction mechanism in the low bias region, while Schottky emission governs the high field regime for both SD and HJ diodes. These results establish ZnPc as a promising interfacial material for enhancing the interface quality and improving the electrical performance of ZnO-based Schottky devices.</p>

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Modification of electrical possessions of Au/n-ZnO Schottky diode through a ZnPc interlayer and its morphological, structural, chemical and optical properties

  • 期刊论文

  • 发表日期：

    2026年5月26日

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  • P. Prabhu Thapaswini,
  • V. Sumalatha,
  • D. Surya Reddy

摘要

Zinc phthalocyanine (ZnPc) thin films are introduced as an interfacial layer to tailor the electrical properties of Au/n-ZnO Schottky diode (SD), resulting in the formation of Au/ZnPc/n-ZnO heterojunction (HJ) diode. The surface topology, structural integrity, chemical and optical possessions of the thermally evaporated ZnPc films are explored by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and UV–Vis spectroscopy. Optical absorption measurements reveal a band gap of 3.18 eV. The electrical and charge transport properties of the SD and HJ diodes are investigated using I-V measurements. The HJ exhibits a greater rectification ratio, 387.88, and lower reverse leakage current, 1.54 × 10–10 A, than the SD (3.04 and 1.74 × 10–7 A). A higher barrier height ( \(\Phi_{b}\) Φ b ) of 0.90 eV is obtained for the HJ compared with the SD (0.73 eV), demonstrating that the ZnPc interlayer effectively modifies the M-S interface. The Φb, ideality factor (n) and series resistance (RS) of the SD and HJ are extracted using forward-bias I-V, Z(V)-Vd plot, Cheung’s functions and Norde’s methods. The interface state density (NSS) of the HJ (7.46 × 1011 eV−1 cm−2) is less than that of the SD (1.49×1012 eV−1 cm−2), indicating effective passivation of the ZnO surface by the ZnPc interlayer. The Poole Frenkel emission controls the reverse current conduction mechanism in the low bias region, while Schottky emission governs the high field regime for both SD and HJ diodes. These results establish ZnPc as a promising interfacial material for enhancing the interface quality and improving the electrical performance of ZnO-based Schottky devices.