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<p>Cu–Cu bonding is a crucial interconnection technology for high-density interconnect printed circuit boards (HDI-PCBs), which are key components of next-generation integrated circuit devices. However, achieving reliable and high-performance Cu–Cu joints under moderate sintering conditions remains a major challenge for HDI-PCB fabrication. In this study, a novel strategy is proposed by adding oxalic acid (OA) to Cu paste to enhance the mechanical and electrical properties of Cu–Cu joints sintered at 220&#xa0;°C/6&#xa0;MPa. In situ decomposition of OA generates reductive CO, which effectively activates Cu surfaces and facilitates the formation of sintering necks and coarsening of the nanoporous structure. Consequently, the Cu–Cu joints exhibit significantly improved shear strength from 29.86 to 70.74&#xa0;MPa and reduced electrical resistivity from 5.66 to 4.65 μΩ·cm. This work proposes a route toward low-temperature Cu–Cu bonding promising for HDI-PCB packaging.</p>

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Oxalic acid-mediated enhancement of Cu–Cu joint performance under moderate sintering conditions

  • 期刊论文

  • 发表日期：

    2026年5月26日

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  • Yupan Zhang,
  • Hongjie Xu,
  • Songya Feng,
  • Benfang He,
  • Yue Liao,
  • Zhiyong Xue

摘要

Cu–Cu bonding is a crucial interconnection technology for high-density interconnect printed circuit boards (HDI-PCBs), which are key components of next-generation integrated circuit devices. However, achieving reliable and high-performance Cu–Cu joints under moderate sintering conditions remains a major challenge for HDI-PCB fabrication. In this study, a novel strategy is proposed by adding oxalic acid (OA) to Cu paste to enhance the mechanical and electrical properties of Cu–Cu joints sintered at 220 °C/6 MPa. In situ decomposition of OA generates reductive CO, which effectively activates Cu surfaces and facilitates the formation of sintering necks and coarsening of the nanoporous structure. Consequently, the Cu–Cu joints exhibit significantly improved shear strength from 29.86 to 70.74 MPa and reduced electrical resistivity from 5.66 to 4.65 μΩ·cm. This work proposes a route toward low-temperature Cu–Cu bonding promising for HDI-PCB packaging.