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<p>Mn-doped SnO<sub>2</sub> thin films with controlled Mn concentrations (10, 20, and 30%) were fabricated using ultrasonic spray pyrolysis to investigate defect-mediated resistive switching and nonlinear transport behavior in oxide-based memristors. The structural, optical, and electrical properties were systematically analyzed to elucidate the role of Mn-induced defect states in governing charge transport mechanisms. All devices exhibit stable and reproducible bipolar resistive switching with well-defined SET and RESET processes. The results demonstrate that Mn incorporation critically modifies the defect landscape, particularly oxygen vacancy distribution and trap states, which regulate the formation and rupture of conductive filaments. Among the investigated compositions, the device with 20% Mn concentration exhibits optimal performance, characterized by enhanced switching stability, a high ON/OFF ratio, and reduced operating voltage, indicating a balanced defect density for controlled filament dynamics. Analysis of the current–voltage characteristics reveals a transition from ohmic conduction at low bias to space-charge-limited current (SCLC) at higher voltages, followed by trap-controlled transport. Notably, pronounced negative differential resistance (NDR) behavior is observed and attributed to the interplay between Coulomb-charging effects and defect-mediated conduction, where Mn-induced localized states act as dynamic charge-trapping centers that modulate carrier injection. These findings demonstrate that controlled defect engineering via Mn doping enables tuning of conduction mechanisms and nonlinear electrical response, providing a pathway for optimizing oxide-based memristors for next-generation non-volatile memory and neuromorphic applications.</p>

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Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

  • 期刊论文

  • 发表日期：

    2026年5月24日

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  • Jamoliddin X. Murodov,
  • Shavkat U. Yuldashev,
  • Azamat O. Arslanov,
  • Noiba U. Botirova,
  • Javohir Sh. Khudoykulov,
  • Ra’no Sh. Sharipova

摘要

Mn-doped SnO2 thin films with controlled Mn concentrations (10, 20, and 30%) were fabricated using ultrasonic spray pyrolysis to investigate defect-mediated resistive switching and nonlinear transport behavior in oxide-based memristors. The structural, optical, and electrical properties were systematically analyzed to elucidate the role of Mn-induced defect states in governing charge transport mechanisms. All devices exhibit stable and reproducible bipolar resistive switching with well-defined SET and RESET processes. The results demonstrate that Mn incorporation critically modifies the defect landscape, particularly oxygen vacancy distribution and trap states, which regulate the formation and rupture of conductive filaments. Among the investigated compositions, the device with 20% Mn concentration exhibits optimal performance, characterized by enhanced switching stability, a high ON/OFF ratio, and reduced operating voltage, indicating a balanced defect density for controlled filament dynamics. Analysis of the current–voltage characteristics reveals a transition from ohmic conduction at low bias to space-charge-limited current (SCLC) at higher voltages, followed by trap-controlled transport. Notably, pronounced negative differential resistance (NDR) behavior is observed and attributed to the interplay between Coulomb-charging effects and defect-mediated conduction, where Mn-induced localized states act as dynamic charge-trapping centers that modulate carrier injection. These findings demonstrate that controlled defect engineering via Mn doping enables tuning of conduction mechanisms and nonlinear electrical response, providing a pathway for optimizing oxide-based memristors for next-generation non-volatile memory and neuromorphic applications.