Scholarlink

<p>P-type CuInS<sub>2</sub> (CIS) thin films are promising candidates for use as absorber layers in thin film photovoltaics. They have attracted considerable interest due to their high photovoltaic conversion efficiency and ease of synthesis using simple and low-cost techniques. In this study, CIS was synthesized and deposited on glass substrates by sol–gel spin-coating method. Thin films were annealed at 350&#xa0;°C for 10, 15, and 20&#xa0;min without sulfurization. The synthesized films were characterized using various techniques such as X-ray diffraction (XRD), Raman spectroscopy (RS), Scanning electron microscopy (SEM), UV–visible spectrophotometry (UV–Vis), and four-point probe TECHNIQUE (FPP) to investigate the effect of annealing time on their structural, morphological, linear, and nonlinear optical properties. XRD spectra showed that the intensity of the (112) peak increased with annealing time, revealing good crystallinity of the films. Raman analysis revealed a unique peak located at the 298.12 position, thus confirming good formation of CIS. SEM micrographs revealed densely packed grains uniformly distributed over the entire surface of the substrate for the film annealed for 20&#xa0;min. Various optical parameters including static refractive index (<i>n</i><sub>0</sub>), oscillation energy (<i>E</i><sub>0</sub>), dispersion energy (<i>E</i><sub>d</sub>), and band gap energy (<i>E</i><sub>g</sub>) were calculated. The bandgap energy of CIS decreased from 1.53 to 1.47&#xa0;eV as the annealing time increased. In addition, we analyzed the third-order nonlinear susceptibilities (<i>χ</i><sup>(3)</sup>) and the nonlinear refractive index (<i>n</i><sub>2</sub>). Finally, the FPP technique confirmed the other results by revealing that the best annealing time for a suitable electrical conductivity was 20&#xa0;min.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effect of annealing time on structural, morphological, linear and nonlinear optical properties of spin-coated CuInS2 (CIS) thin film for opto-electronic applications

  • 期刊论文

  • 发表日期：

    2026年5月18日

查看全文
  • Hervé Joël Tchognia Nkuissi,
  • Bouchaib Hartiti,
  • Mondjou Georges Constant Beh,
  • Ahmed Ziti,
  • Abdelkrim Batan,
  • Guy Molay Tchapga Gnamsi,
  • Luc Leroy Mambou Ngueyep,
  • Jean Marie Bienvenu Ndjaka,
  • Philippe Thevenin

摘要

P-type CuInS2 (CIS) thin films are promising candidates for use as absorber layers in thin film photovoltaics. They have attracted considerable interest due to their high photovoltaic conversion efficiency and ease of synthesis using simple and low-cost techniques. In this study, CIS was synthesized and deposited on glass substrates by sol–gel spin-coating method. Thin films were annealed at 350 °C for 10, 15, and 20 min without sulfurization. The synthesized films were characterized using various techniques such as X-ray diffraction (XRD), Raman spectroscopy (RS), Scanning electron microscopy (SEM), UV–visible spectrophotometry (UV–Vis), and four-point probe TECHNIQUE (FPP) to investigate the effect of annealing time on their structural, morphological, linear, and nonlinear optical properties. XRD spectra showed that the intensity of the (112) peak increased with annealing time, revealing good crystallinity of the films. Raman analysis revealed a unique peak located at the 298.12 position, thus confirming good formation of CIS. SEM micrographs revealed densely packed grains uniformly distributed over the entire surface of the substrate for the film annealed for 20 min. Various optical parameters including static refractive index (n0), oscillation energy (E0), dispersion energy (Ed), and band gap energy (Eg) were calculated. The bandgap energy of CIS decreased from 1.53 to 1.47 eV as the annealing time increased. In addition, we analyzed the third-order nonlinear susceptibilities (χ(3)) and the nonlinear refractive index (n2). Finally, the FPP technique confirmed the other results by revealing that the best annealing time for a suitable electrical conductivity was 20 min.