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<p>Nitrogen and boron co-doped single-layer graphene was synthesized by the CVD method with NH<sub>3</sub> and B<sub>2</sub>H<sub>6</sub> as doping sources. The co-doping process aimed to enhance graphene’s film quality by introducing nitrogen and boron heteroatoms into the carbon lattice. Different NH<sub>3</sub>/B<sub>2</sub>H<sub>6</sub> flow ratios (5/5, 10/5, 15/5 sccm) were investigated to optimize doping and its effect on graphene’s optoelectronic properties. Raman spectroscopy confirmed the successful synthesis of single- and few-layer graphene, with the <i>I</i><sub>2D</sub>/<i>I</i><sub>G</sub> ratio indicating single-layer graphene for the 5/5 sccm flow ratio. Electrical characterization showed a significant reduction in sheet resistance, from 520 Ω/□ for pristine graphene to as low as 115 Ω/□ for co-doped samples. X-ray photoelectron spectroscopy analysis further revealed the bonding configurations of nitrogen (pyridinic, pyrrolic, and quaternary N) and boron (quaternary and edge-oxidized B), confirming successful substitutional doping. Incorporated into a hybrid indium tin oxide transparent conducting electrode, the improved co-doped graphene showed improved optical transmittance (~ 1%) and Si-based solar cell efficiency improved from 12.8 to 14.2%. These findings are proof of controlled nitrogen and boron co-doping as an efficient method of designing next-generation high-performance transparent conducting electrodes of optoelectronic and photovoltaic devices. The co-doping process achieved enhanced electrical conductivity and doping stability, making co-doped graphene a promising material for advanced optoelectronic applications<b>.</b></p>

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CVD-grown nitrogen–boron co-doped graphene for enhanced performance of silicon-based solar cells

  • 期刊论文

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  • 发表日期：

    2026年5月15日

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  • Ali Altuntepe

摘要

Nitrogen and boron co-doped single-layer graphene was synthesized by the CVD method with NH3 and B2H6 as doping sources. The co-doping process aimed to enhance graphene’s film quality by introducing nitrogen and boron heteroatoms into the carbon lattice. Different NH3/B2H6 flow ratios (5/5, 10/5, 15/5 sccm) were investigated to optimize doping and its effect on graphene’s optoelectronic properties. Raman spectroscopy confirmed the successful synthesis of single- and few-layer graphene, with the I2D/IG ratio indicating single-layer graphene for the 5/5 sccm flow ratio. Electrical characterization showed a significant reduction in sheet resistance, from 520 Ω/□ for pristine graphene to as low as 115 Ω/□ for co-doped samples. X-ray photoelectron spectroscopy analysis further revealed the bonding configurations of nitrogen (pyridinic, pyrrolic, and quaternary N) and boron (quaternary and edge-oxidized B), confirming successful substitutional doping. Incorporated into a hybrid indium tin oxide transparent conducting electrode, the improved co-doped graphene showed improved optical transmittance (~ 1%) and Si-based solar cell efficiency improved from 12.8 to 14.2%. These findings are proof of controlled nitrogen and boron co-doping as an efficient method of designing next-generation high-performance transparent conducting electrodes of optoelectronic and photovoltaic devices. The co-doping process achieved enhanced electrical conductivity and doping stability, making co-doped graphene a promising material for advanced optoelectronic applications.