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<p>Yttrium iron garnet ferrites, characterized by their high density and exceptional microwave magnetic properties, have emerged as indispensable core materials driving the ongoing miniaturization and integration of modern microwave devices. Building upon the Bi–Sn–Cu co-doping approach, this study systematically investigated the effects of varying V<sub>2</sub>O<sub>5</sub> additions (0.5&#xa0;wt%, 1.0&#xa0;wt%, 1.5&#xa0;wt%, 2.0&#xa0;wt%) on the microstructure, element distribution, magnetic properties, and dielectric properties of the material, with the aim of further optimizing its performance. The results indicate that the addition of an appropriate amount of V<sub>2</sub>O<sub>5</sub> can effectively promote grain growth and improve the magnetic and dielectric properties. Notably, when the content of V<sub>2</sub>O<sub>5</sub> was 1.5&#xa0;wt%, the overall performance of the samples was optimal, with ferromagnetic resonance linewidth (Δ<i>H</i>) reaching 187 Oe, while the saturation magnetization (<i>M</i><sub>s</sub>) and dielectric constant (ε′) remained high, at 21.5&#xa0;emu/g and 19.64, respectively.</p>

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Low-temperature sintered Bi–Sn–Cu co-doped yttrium iron garnet ferrite optimized with V2O5 as a sintering aid: magnetism, ferromagnetic resonance linewidth, and dielectric properties

  • 期刊论文

  • 发表日期：

    2026年5月21日

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  • Gang Ma,
  • Weihan Wang,
  • Shuyi Sun,
  • Chujun Wang,
  • Yongzhen Feng,
  • Yangyang Qian,
  • Hui Zheng

摘要

Yttrium iron garnet ferrites, characterized by their high density and exceptional microwave magnetic properties, have emerged as indispensable core materials driving the ongoing miniaturization and integration of modern microwave devices. Building upon the Bi–Sn–Cu co-doping approach, this study systematically investigated the effects of varying V2O5 additions (0.5 wt%, 1.0 wt%, 1.5 wt%, 2.0 wt%) on the microstructure, element distribution, magnetic properties, and dielectric properties of the material, with the aim of further optimizing its performance. The results indicate that the addition of an appropriate amount of V2O5 can effectively promote grain growth and improve the magnetic and dielectric properties. Notably, when the content of V2O5 was 1.5 wt%, the overall performance of the samples was optimal, with ferromagnetic resonance linewidth (ΔH) reaching 187 Oe, while the saturation magnetization (Ms) and dielectric constant (ε′) remained high, at 21.5 emu/g and 19.64, respectively.