In current study, the electrical and dielectric properties of the metal/oxide/semiconductor (MOS) structure formed with an InSe thin film layer grown by thermal evaporation were investigated over the voltage range of ± 4 V and frequency range of 1 kHz to 1 MHz. Admittance analysis \(Y=G+j\omega C\) was performed for electrical measurements. Dielectric parameters were derived from the electrical measurement results. The density of states/traps were calculated employing both the Hill-Coleman and low–high frequency capacitance (CLF-CHF) methods is consistent with each other, and its decrease with increasing frequency is a result of the surface passivation effect. The series resistance reduces with increasing frequency. Dielectric constant and loss decrease with increasing frequency due to the effect of different polarization mechanisms. \({\sigma}_{ac}\) is independent of frequency in the low frequency region but exhibits a linear increase at high frequency region. The results obtained highlight that the fabricated MOS structure shows potential for storage devices, which are an integral part of electronic circuits and applications.
