Comparative study of SCAPS-1D simulation of ETL effects and device parameters in lead-free MASnI3 and FASnI3 perovskite solar cell
摘要
In this research article, a comparative analysis of electron transport layers (ETLs) is performed for two different tin (Sn)-based perovskite materials (FASnI3 and MASnI3) to enhance the overall performance and stability of the perovskite solar cells (PSCs). Two device structures FTO/ETL/FASnI3/GO/Au and FTO/ETL/MASnI3/GO/Au are simulated using SCAPS-1D software, where ETLs, such as TiO2, ZnSe, ZnMgO, WS2, and C60, are studied in terms of charge extraction and recombination loss. Also, in order to understand their effects on device performance, a thorough parametric analysis is performed by changing absorber thickness, defect density (Nt), series (Rs) and shunt (Rsh) resistances, and operating temperature. By evaluating crucial output parameters such as open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF), and power conversion efficiency (PCE), the photovoltaic performance is analyzed. With best PCEs of 24.53% with WS2 and 23.99% with ZnSe, FASnI3 constantly surpassed the most of ETLs caused by increased interfacial energy and minimized recombination. Alternatively, MASnI3 demonstrated better photon absorption and carrier generation, which are reflected by high Jsc values. But it has substantial Voc and FF losses, which limits its overall device efficiency. Additionally, MASnI3 attains a PCE of 16.49% when it is used together with ZnMgO, emphasizing the essential role of ETL in device optimization. These results emphasize the importance of ETL selection in improving the performance of lead (Pb)-free environmentally friendly PSCs.