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<p>Antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>) is an emerging absorber material for thin-film photovoltaics owing to its optimal bandgap, high absorption coefficient, and environmentally friendly composition. In this work, a heterojunction solar cell with FTO/SnS<sub>2</sub>/Sb<sub>2</sub>S<sub>3</sub>/Au configuration was designed and simulated using the SCAPS-1D package to explore the potential of SnS<sub>2</sub> as a non-toxic alternative to the conventional CdS, a commonly used window-layer material. The device performance was systematically studied by considering parameters, such as thickness, acceptor and donor densities, defect density at bulk, and the interface of the layers, while current–voltage (J–V), built-in electric field, and C–V and band alignment characteristics were analyzed to gain deeper insight into charge transport and recombination mechanisms. Under ideal conditions, the optimized device exhibited a theoretical efficiency exceeding 25%, demonstrating the capability of this architecture. Upon inclusion of realistic bulk and interface defect states, the optimized structure retained significantly high performance with PCE 18.3%. The simulation results highlight the potential of the SnS<sub>2</sub>/Sb<sub>2</sub>S<sub>3</sub> heterojunction as a candidate for efficient, low-cost, and environmentally sustainable thin-film solar cells.</p>

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Interface analysis and performance optimization of SnS₂/Sb₂S₃ thin-film solar cells using SCAPS-1D package

  • 期刊论文

  • 发表日期：

    2026年5月12日

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  • Tulsi Tarak,
  • Ayush Khare

摘要

Antimony sulfide (Sb2S3) is an emerging absorber material for thin-film photovoltaics owing to its optimal bandgap, high absorption coefficient, and environmentally friendly composition. In this work, a heterojunction solar cell with FTO/SnS2/Sb2S3/Au configuration was designed and simulated using the SCAPS-1D package to explore the potential of SnS2 as a non-toxic alternative to the conventional CdS, a commonly used window-layer material. The device performance was systematically studied by considering parameters, such as thickness, acceptor and donor densities, defect density at bulk, and the interface of the layers, while current–voltage (J–V), built-in electric field, and C–V and band alignment characteristics were analyzed to gain deeper insight into charge transport and recombination mechanisms. Under ideal conditions, the optimized device exhibited a theoretical efficiency exceeding 25%, demonstrating the capability of this architecture. Upon inclusion of realistic bulk and interface defect states, the optimized structure retained significantly high performance with PCE 18.3%. The simulation results highlight the potential of the SnS2/Sb2S3 heterojunction as a candidate for efficient, low-cost, and environmentally sustainable thin-film solar cells.