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<p>Indium-free transparent conductive thin films (TCFs) with high optical transparency, low sheet resistance, and robust mechanical durability are crucial for next-generation flexible optoelectronics. Here, we report a room-temperature dielectric-engineered SiO<sub>2</sub>/Ag nanowire (Ag NW) composite TCF that simultaneously achieves excellent optoelectronic performance and environmental stability. An ultrathin SiO<sub>2</sub> layer is conformally integrated with Ag NW networks, enabling quantum-tunneling-mediated interwire conduction while leveraging the dielectric layer to enhance adhesion, suppress silver oxidation, and improve mechanical robustness. Systematic tuning of nanowire density leads to an optimized composite film exhibiting a transmittance of 88.7% and a sheet resistance of 9.6 Ω/□, comparable to or surpassing traditional ITO at similar transparency. The composite TCF demonstrates outstanding adhesion, long-term storage stability, solvent resistance, and mechanical flexibility, maintaining performance after repeated bending and ultrasonication tests. This work establishes a scalable, fully indium-free, room-temperature strategy for high-performance transparent electrodes and provides a promising platform for flexible displays, wearable electronics, and large-area printed optoelectronic devices.</p>

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Indium-free SiO2/Ag nanowire composite transparent conductive thin films with simultaneous high transparency, low resistance, and superior stability

  • 期刊论文

  • 发表日期：

    2026年5月12日

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  • Zhenmin Liu,
  • Jinke Bai,
  • Shihui Yu

摘要

Indium-free transparent conductive thin films (TCFs) with high optical transparency, low sheet resistance, and robust mechanical durability are crucial for next-generation flexible optoelectronics. Here, we report a room-temperature dielectric-engineered SiO2/Ag nanowire (Ag NW) composite TCF that simultaneously achieves excellent optoelectronic performance and environmental stability. An ultrathin SiO2 layer is conformally integrated with Ag NW networks, enabling quantum-tunneling-mediated interwire conduction while leveraging the dielectric layer to enhance adhesion, suppress silver oxidation, and improve mechanical robustness. Systematic tuning of nanowire density leads to an optimized composite film exhibiting a transmittance of 88.7% and a sheet resistance of 9.6 Ω/□, comparable to or surpassing traditional ITO at similar transparency. The composite TCF demonstrates outstanding adhesion, long-term storage stability, solvent resistance, and mechanical flexibility, maintaining performance after repeated bending and ultrasonication tests. This work establishes a scalable, fully indium-free, room-temperature strategy for high-performance transparent electrodes and provides a promising platform for flexible displays, wearable electronics, and large-area printed optoelectronic devices.