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<p>This study investigated the effect of sintering temperature on the structural, dielectric and electrical properties of zinc aluminate (ZnAl<sub>2</sub>O<sub>4</sub>) synthesized via the sol-gel method. X-ray diffraction (XRD) confirmed a cubic spinel structure, with crystallite size increasing from 41.83 to 50.49&#xa0;nm as the sintering temperature increased. Raman and X-ray photoelectron spectroscopy (XPS) analyses revealed a reduction in structural disorders and the presence of oxygen vacancies. The dielectric constant (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\varepsilon^{\prime}\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mi>ε</mi> <mo>′</mo> </msup> </math></EquationSource> </InlineEquation>) decreased with increasing sintering temperature, dropping from 22.63 to 11.71 at 1&#xa0;kHz. The temperature dependence of ac conductivity confirmed the Arrhenius law, and the activation energy (E<sub>a</sub>) increased from 0.23 to 0.28&#xa0;eV. Furthermore, the grain boundary resistance (R<sub>gb</sub>) increased from 42.92 to 266.9&#xa0;MΩ. These electrical variations are attributed to enhanced densification and cation ordering at higher sintering temperatures, which suppress hopping conduction and interfacial polarization. The sample sintered at 1300&#xa0;°C exhibits a low dielectric constant and high resistivity, making it a promising candidate for electronic applications.</p>

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Sintering temperature dependence on the structure and electrical properties of ZnAl2O4 ceramics prepared by sol-gel method

  • 期刊论文

  • 发表日期：

    2026年5月2日

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  • Yu-Yan Shen,
  • Yong-Hui Zhou,
  • Yong Chen,
  • Mao-Hua Wang

摘要

This study investigated the effect of sintering temperature on the structural, dielectric and electrical properties of zinc aluminate (ZnAl2O4) synthesized via the sol-gel method. X-ray diffraction (XRD) confirmed a cubic spinel structure, with crystallite size increasing from 41.83 to 50.49 nm as the sintering temperature increased. Raman and X-ray photoelectron spectroscopy (XPS) analyses revealed a reduction in structural disorders and the presence of oxygen vacancies. The dielectric constant ( \(\varepsilon^{\prime}\) ε ′ ) decreased with increasing sintering temperature, dropping from 22.63 to 11.71 at 1 kHz. The temperature dependence of ac conductivity confirmed the Arrhenius law, and the activation energy (Ea) increased from 0.23 to 0.28 eV. Furthermore, the grain boundary resistance (Rgb) increased from 42.92 to 266.9 MΩ. These electrical variations are attributed to enhanced densification and cation ordering at higher sintering temperatures, which suppress hopping conduction and interfacial polarization. The sample sintered at 1300 °C exhibits a low dielectric constant and high resistivity, making it a promising candidate for electronic applications.