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<p>In this work, WS<sub>2</sub>/reduced graphene oxide (rGO) composites were synthesized via solid-state synthesis techniques to investigate the influence of rGO incorporation on the electrical and thermal performance of WS<sub>2</sub> across a wide temperature range. Hall effect measurements revealed that rGO addition increased carrier concentration and mobility, with maximum mobility (~ 13&#xa0;cm<sup>2</sup>/V·s) observed at 1 wt% rGO. Thermal diffusivity and total thermal conductivity decreased with rGO content due to enhanced phonon scattering at WS<sub>2</sub>–rGO interfaces. Electrical conductivity increased significantly with temperature and rGO content, while the Seebeck coefficient decreased due to higher carrier concentrations. The power factor reached a maximum of ~ 113&#xa0;µW/mK<sup>2</sup> at 753&#xa0;K for the 1 wt% rGO sample. A figure of merit (ZT) of ~ 0.10 was achieved at this composition, representing a fivefold enhancement over pure WS<sub>2</sub>. These results demonstrate that optimal level of rGO incorporation effectively decouples thermal and electrical transport, offering a promising strategy to optimize WS<sub>2</sub>-based thermoelectric materials.</p>

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Enhancement in thermoelectric properties of rGO-embedded WS2 via interface-induced phonon scattering

  • 期刊论文

  • 发表日期：

    2026年5月13日

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  • T. Murugadass,
  • Hiroya Ikeda,
  • K. D. Nisha

摘要

In this work, WS2/reduced graphene oxide (rGO) composites were synthesized via solid-state synthesis techniques to investigate the influence of rGO incorporation on the electrical and thermal performance of WS2 across a wide temperature range. Hall effect measurements revealed that rGO addition increased carrier concentration and mobility, with maximum mobility (~ 13 cm2/V·s) observed at 1 wt% rGO. Thermal diffusivity and total thermal conductivity decreased with rGO content due to enhanced phonon scattering at WS2–rGO interfaces. Electrical conductivity increased significantly with temperature and rGO content, while the Seebeck coefficient decreased due to higher carrier concentrations. The power factor reached a maximum of ~ 113 µW/mK2 at 753 K for the 1 wt% rGO sample. A figure of merit (ZT) of ~ 0.10 was achieved at this composition, representing a fivefold enhancement over pure WS2. These results demonstrate that optimal level of rGO incorporation effectively decouples thermal and electrical transport, offering a promising strategy to optimize WS2-based thermoelectric materials.