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<p>The impact of different confinement barrier (CB) compositions on the emission of InAs quantum dots (QDs) in dot-in—a-well (DWELL) structures embedded in GaAs/Al<sub>0.30</sub>Ga<sub>0.70</sub>As heterostructures has been investigated both before and after thermal annealing. Two DWELL structures were compared: (1) a structure consisting of an In<sub>0.15</sub>Ga<sub>0.85</sub>As buffer layer and an Al<sub>0.30</sub>Ga<sub>0.70</sub>As CB layer; (2) a structure incorporating an In<sub>0.25</sub>Ga<sub>0.75</sub>As buffer layer and Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB layer. The QD structures were studied in their as-grown (AG) state (without annealing) and after annealing at 640&#xa0;°C or 710&#xa0;°C for 2&#xa0;h in an Ar atmosphere. To investigate variations in the QDs and quantum well (QW) parameters, a combination of techniques was employed, including photoluminescence (PL) spectroscopy, transmission electron microscopy (TEM), and high-resolution X-ray diffraction (HR-XRD). In addition, numerical simulations of the HR-XRD scans were performed, and PL measurements were conducted over a temperature range of 10–400&#xa0;K. The advantages of structure 2 (Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB), compared to structure 1 (Al<sub>0.30</sub>Ga<sub>0.70</sub>As CB), after high-temperature treatments were demonstrated and analyzed. The results provide valuable insights for improving InAs QD structures for telecommunication and optoelectronic applications.</p>

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Annealing impact on emission of InAs quantum dots with different confinement barriers in AlGaAs/GaAs structures

  • 期刊论文

  • 发表日期：

    2026年5月8日

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  • R. Cisneros Tamayo,
  • T. V. Torchynska,
  • C. M. Perez Rivas,
  • G. Polupan,
  • A. Stintz

摘要

The impact of different confinement barrier (CB) compositions on the emission of InAs quantum dots (QDs) in dot-in—a-well (DWELL) structures embedded in GaAs/Al0.30Ga0.70As heterostructures has been investigated both before and after thermal annealing. Two DWELL structures were compared: (1) a structure consisting of an In0.15Ga0.85As buffer layer and an Al0.30Ga0.70As CB layer; (2) a structure incorporating an In0.25Ga0.75As buffer layer and Al0.40Ga0.45In0.15As CB layer. The QD structures were studied in their as-grown (AG) state (without annealing) and after annealing at 640 °C or 710 °C for 2 h in an Ar atmosphere. To investigate variations in the QDs and quantum well (QW) parameters, a combination of techniques was employed, including photoluminescence (PL) spectroscopy, transmission electron microscopy (TEM), and high-resolution X-ray diffraction (HR-XRD). In addition, numerical simulations of the HR-XRD scans were performed, and PL measurements were conducted over a temperature range of 10–400 K. The advantages of structure 2 (Al0.40Ga0.45In0.15As CB), compared to structure 1 (Al0.30Ga0.70As CB), after high-temperature treatments were demonstrated and analyzed. The results provide valuable insights for improving InAs QD structures for telecommunication and optoelectronic applications.