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<p>BiSe is a promising Te-free thermoelectric (TE) material with an intrinsically low lattice thermal conductivity, but its electrical transport suffers from high carrier concentration due to the large amount of intrinsic Se vacancies. Herein, we report on the improved electrical performance of S-doped BiSe (BiSe<sub>1−x</sub>S<sub>x</sub>) films synthesized via a facile vacuum thermal evaporation method using Bi<sub>2</sub>S<sub>3</sub> as a co-evaporation source. Two sets of BiSe<sub>1−x</sub>S<sub>x</sub> films with different microstructures, i.e., nanoplates stacked films and micro-sized columns vertically stacked films, were fabricated by tuning the substrate temperature. The structural and compositional characterizations reveal that S dopants substitute for Se in the BiSe lattice. Electrical transport measurements demonstrate that S doping effectively modulates the carrier concentration and consequently influences the TE properties of the BiSe films. The optimized BiSe<sub>0.988</sub>S<sub>0.012</sub> nanoplates stacked film exhibits an electrical conductivity of 150.72 S cm<sup>−1</sup> and a Seebeck coefficient of 125.76 μV&#xa0;K<sup>−1</sup> at 300&#xa0;K, yielding a maximum power factor of 2.38 μW&#xa0;cm<sup>−1</sup>&#xa0;K<sup>−2</sup>, representing an approximately 80% enhancement compared with the pristine BiSe film. These results indicate that S doping is an effective approach for improving the electrical transport and TE performance of BiSe-based films.</p>

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Enhanced thermoelectric performance of BiSe1−xSx films prepared by vacuum thermal evaporation

  • 期刊论文

  • 发表日期：

    2026年5月4日

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  • Yongzhao Feng,
  • Shiyu Wang,
  • Xiaofang Lai,
  • Jikang Jian

摘要

BiSe is a promising Te-free thermoelectric (TE) material with an intrinsically low lattice thermal conductivity, but its electrical transport suffers from high carrier concentration due to the large amount of intrinsic Se vacancies. Herein, we report on the improved electrical performance of S-doped BiSe (BiSe1−xSx) films synthesized via a facile vacuum thermal evaporation method using Bi2S3 as a co-evaporation source. Two sets of BiSe1−xSx films with different microstructures, i.e., nanoplates stacked films and micro-sized columns vertically stacked films, were fabricated by tuning the substrate temperature. The structural and compositional characterizations reveal that S dopants substitute for Se in the BiSe lattice. Electrical transport measurements demonstrate that S doping effectively modulates the carrier concentration and consequently influences the TE properties of the BiSe films. The optimized BiSe0.988S0.012 nanoplates stacked film exhibits an electrical conductivity of 150.72 S cm−1 and a Seebeck coefficient of 125.76 μV K−1 at 300 K, yielding a maximum power factor of 2.38 μW cm−1 K−2, representing an approximately 80% enhancement compared with the pristine BiSe film. These results indicate that S doping is an effective approach for improving the electrical transport and TE performance of BiSe-based films.