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<p>Nickel oxide (NiO) is a versatile material with immense potential for next-generation optoelectronic and energy devices due to its stability, wide band gap, and tunable properties. NiO thin films were deposited under different Ar/O<sub>2</sub> atmospheres using RF magnetron sputtering to investigate the influence of oxygen incorporation on their structural, morphological, and optical properties. XRD analysis revealed that the crystallite size decreases from ~ 12&#xa0;nm for NiO-A85 to ~ 4&#xa0;nm for oxygen-assisted films, accompanied by an increase in lattice strain and dislocation density. FESEM and AFM studies showed a transition from smooth and compact morphology (Rq ≈6.7&#xa0;nm) to rougher surfaces with increased grain size and surface roughness (Rq ≈16.0&#xa0;nm) for oxygen-rich films. Optical measurements indicated high transparency in the visible region (70–100%), with improved transmittance for oxygen-assisted samples. The optical band gap was found to vary in the range of ~ 3.85–3.89&#xa0;eV, influenced by defect states and Ni<sup>3</sup>⁺ incorporation. These results demonstrate that oxygen partial pressure plays a crucial role in tuning the structure–property relationships of NiO thin films, making them suitable for optoelectronic and energy-related applications.</p>

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Effect of argon and oxygen atmospheres on the growth and characteristics of NiO thin films deposited by RF sputtering technique

  • 期刊论文

  • 发表日期：

    2026年4月26日

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  • N. V. Srinivasa,
  • W. K. Choi,
  • Basavaraj Angadi

摘要

Nickel oxide (NiO) is a versatile material with immense potential for next-generation optoelectronic and energy devices due to its stability, wide band gap, and tunable properties. NiO thin films were deposited under different Ar/O2 atmospheres using RF magnetron sputtering to investigate the influence of oxygen incorporation on their structural, morphological, and optical properties. XRD analysis revealed that the crystallite size decreases from ~ 12 nm for NiO-A85 to ~ 4 nm for oxygen-assisted films, accompanied by an increase in lattice strain and dislocation density. FESEM and AFM studies showed a transition from smooth and compact morphology (Rq ≈6.7 nm) to rougher surfaces with increased grain size and surface roughness (Rq ≈16.0 nm) for oxygen-rich films. Optical measurements indicated high transparency in the visible region (70–100%), with improved transmittance for oxygen-assisted samples. The optical band gap was found to vary in the range of ~ 3.85–3.89 eV, influenced by defect states and Ni3⁺ incorporation. These results demonstrate that oxygen partial pressure plays a crucial role in tuning the structure–property relationships of NiO thin films, making them suitable for optoelectronic and energy-related applications.