Scholarlink

<p>In this work, MoS<sub>2-x</sub> thin films are deposited on silicon and Corning substrates. The film deposited on silicon substrate is used to fabricate ITO/MoS<sub>2-x</sub>/c-Si(p)/p<sup>+</sup>-Si(Al)/Ag heterojunction solar cell. The fabricated device exhibits a maximum power conversion efficiency of 3.28%, with V<sub>oc</sub> of 0.268&#xa0;V, J<sub>sc</sub> of 33.59&#xa0;mA&#xa0;cm⁻<sup>2</sup>, and FF of 0.364. Dark J–V characteristics are analyzed using the single-diode model. The presence of sulfur vacancies in the MoS<sub>2-x</sub> thin film was confirmed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Photoluminescence (PL) spectroscopy was employed to estimate the electron concentration in the film, yielding a value of 4.33 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\times\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>×</mo> </math></EquationSource> </InlineEquation> 10<sup>17</sup>&#xa0;cm<sup>−3.</sup>, which is primarily attributed to shallow donor states. To predict the influence of sulfur vacancy variations on the illuminated J–V characteristics of the ITO/MoS<sub>2-x</sub>/c-Si(p)/p<sup>+</sup>-Si(Al)/Ag device, a two-defect model consisting of shallow (<i>N</i><sub><i>shallow</i></sub>) and deep (<i>N</i><sub><i>deep</i></sub>) states was implemented in Sentaurus TCAD. A systematic variation of these defect densities, one at a time, was used to study their influence on the J–V curve of the device. The increase in <i>N</i><sub><i>shallow</i></sub> density is found to enhance the device performance while the increase in <i>N</i><sub><i>deep</i></sub> density degrades the efficiency of the device. Subsequently, by fitting the experimentally measured J–V curve (under illumination) of the fabricated device with the TCAD results, the sulfur vacancy densities were estimated to be approximately <i>4.5</i> × <i>10</i><sup><i>17</i></sup><i>&#xa0;cm</i><sup><i>−3</i></sup> and <i>1</i> × <i>10</i><sup><i>18</i></sup><i>&#xa0;cm</i><sup><i>−3</i></sup> for shallow defect (<i>N</i><sub><i>shallow</i></sub>) and deep defect (<i>N</i><sub><i>deep</i></sub>), respectively. The concentration of shallow defects is in good agreement with that assessed from the PL data.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Impact of sulfur vacancies on ITO/n-MoS2-x/p-Si/ p+-Si (Al)Ag heterojunction solar cell: a simulation and experimental study

  • 期刊论文

  • 发表日期：

    2026年4月28日

查看全文
  • Anterdipan Singh,
  • Pratima Agarwal

摘要

In this work, MoS2-x thin films are deposited on silicon and Corning substrates. The film deposited on silicon substrate is used to fabricate ITO/MoS2-x/c-Si(p)/p+-Si(Al)/Ag heterojunction solar cell. The fabricated device exhibits a maximum power conversion efficiency of 3.28%, with Voc of 0.268 V, Jsc of 33.59 mA cm⁻2, and FF of 0.364. Dark J–V characteristics are analyzed using the single-diode model. The presence of sulfur vacancies in the MoS2-x thin film was confirmed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Photoluminescence (PL) spectroscopy was employed to estimate the electron concentration in the film, yielding a value of 4.33 \(\times\) × 1017 cm−3., which is primarily attributed to shallow donor states. To predict the influence of sulfur vacancy variations on the illuminated J–V characteristics of the ITO/MoS2-x/c-Si(p)/p+-Si(Al)/Ag device, a two-defect model consisting of shallow (Nshallow) and deep (Ndeep) states was implemented in Sentaurus TCAD. A systematic variation of these defect densities, one at a time, was used to study their influence on the J–V curve of the device. The increase in Nshallow density is found to enhance the device performance while the increase in Ndeep density degrades the efficiency of the device. Subsequently, by fitting the experimentally measured J–V curve (under illumination) of the fabricated device with the TCAD results, the sulfur vacancy densities were estimated to be approximately 4.5 × 1017 cm−3 and 1 × 1018 cm−3 for shallow defect (Nshallow) and deep defect (Ndeep), respectively. The concentration of shallow defects is in good agreement with that assessed from the PL data.