Design and analysis of CsXI3 perovskite solar cells with varied hole and electron transport layers
摘要
The high cost of conventional solar photovoltaic cells remains a major challenge, limiting their widespread adoption. This issue has driven the development of next-generation perovskite solar cells (PSCs), which offer a promising pathway toward cost-effective and high-efficiency solar energy conversion. In this work, CsXI3 (X = Pb, Sn, Ge) is employed as the light-absorbing layer (LAL), positioned between the hole transport layer (HTL) and electron transport layer (ETL), forming the core of the PSC architecture. For the HTL, Copper Antimony Sulfide (CuSbS2) and inorganic Nickel Oxide (NiOₓ) are utilized as hole transport materials (HTMs), while Titanium Dioxide (TiO2) and Zinc Oxide (ZnO) serve as electron transport materials (ETMs) for the ETL. The performance of various device configurations has been systematically evaluated through simulation using SCAPS-1D. The results indicate that the FTO/TiO2/CsPbI3/CuSbS2/Au device configuration achieves the best performance, with a power conversion efficiency (PCE) of 29.1%, fill factor (FF) of 89.1%, open-circuit voltage (Voc) of 1.4 V, and short-circuit current density (Jsc) of 24 mA/cm2. Additionally, the FTO/ZnO/CsSnI3/NiOₓ/Au configuration demonstrates superior performance among similar architectures, yielding a PCE of 28.8%, FF of 88.9%, Voc of 1.34 V, and Jsc of 22.8 mA/cm2. These findings highlight the potential of optimized material combinations and device structures in enhancing PSC performance.