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<p>In this article, the GLAD technique incorporated inside an e-beam evaporation system was implemented to deposit the WO<sub>3</sub>-βGa<sub>2</sub>O<sub>3</sub> nanocluster (NC) device effectively. The deposited samples were characterized using FESEM, EDS and XPS to study the surface morphology and chemical states of the samples. In the electrical analysis, the device with Ag electrode revealed enhanced light sensitivity from ~ 17.82 at 0.86 mW/cm<sup>2</sup> to ~ 69.42 at 2.59 mW/cm<sup>2</sup> of light intensity. The device also gave a fast photoresponse of rise time/fall time of 0.28&#xa0;s/0.31&#xa0;s at -2&#xa0;V for the 2.59 mW/cm<sup>2</sup> light intensity. Moreover, the WO<sub>3</sub>-βGa<sub>2</sub>O<sub>3</sub> NC device illustrated good responsivity, detectivity, and noise equivalent power of ~ 3.742 × 10<sup>3</sup>&#xa0;mA/W, 1.50 × 10<sup>13</sup> Jones, and 2.81 × 10<sup>–13</sup> at 250&#xa0;nm, respectively. The notable performance of the WO<sub>3</sub>-βGa<sub>2</sub>O<sub>3</sub> NC device is mainly due to the effective separation of charge carriers resulting in decreased electron–hole pair recombination. Overall, the results demonstrate a novel and effective approach for the deposition of nanoclusters using the GLAD technique for photodetector application.</p>

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Electrical behavior of GLAD synthesis WO3-βGa2O3 nanocluster

  • 期刊论文

  • 发表日期：

    2026年4月23日

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  • B. Shakila,
  • M. Prakash,
  • Santosh Heisnam,
  • Borish Moirangthem,
  • Naorem Khelchand Singh

摘要

In this article, the GLAD technique incorporated inside an e-beam evaporation system was implemented to deposit the WO3-βGa2O3 nanocluster (NC) device effectively. The deposited samples were characterized using FESEM, EDS and XPS to study the surface morphology and chemical states of the samples. In the electrical analysis, the device with Ag electrode revealed enhanced light sensitivity from ~ 17.82 at 0.86 mW/cm2 to ~ 69.42 at 2.59 mW/cm2 of light intensity. The device also gave a fast photoresponse of rise time/fall time of 0.28 s/0.31 s at -2 V for the 2.59 mW/cm2 light intensity. Moreover, the WO3-βGa2O3 NC device illustrated good responsivity, detectivity, and noise equivalent power of ~ 3.742 × 103 mA/W, 1.50 × 1013 Jones, and 2.81 × 10–13 at 250 nm, respectively. The notable performance of the WO3-βGa2O3 NC device is mainly due to the effective separation of charge carriers resulting in decreased electron–hole pair recombination. Overall, the results demonstrate a novel and effective approach for the deposition of nanoclusters using the GLAD technique for photodetector application.