MnO2-doping drives enhanced piezoelectric performance in Bi3TiNbO9-based ceramics
摘要
Designing high-temperature piezoelectric materials that combine an outstanding piezoelectric constant with increased electrical resistivity continues to be a major challenge. In this work, MnO2 was introduced into Bi2.98Ce0.02TiNb0.98Mo0.02O9 (BCTNM) ceramics to address this issue. The findings demonstrate that a proper level of MnO2 doping is effectively incorporated into the lattice, resulting in increased distortion of the (Ti,Nb)O6 octahedron and defect optimization. These microstructural modifications contribute to a notable improvement in the overall electrical properties. An optimized BCTNM-0.2Mn composition achieves a d33 value of 18 pC/N, an exceptional Curie point of 911 °C, and an electrical resistivity reaching 3.37 × 106 Ω·cm at 500 °C. Moreover, it indicates excellent thermal endurance, retaining over 90% of its initial value following annealing at 500 °C. This study demonstrates that MnO2 doping provides an efficient route to improve the performance of BTN-based ceramics, revealing their suitability for extreme environments.