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<p>A PbS quantum-dot (QD) interfacial layer was integrated with a composition-graded Bi<sub>1−<i>x</i></sub>Ca<sub><i>x</i></sub>FeO<sub>3</sub> (BCFO) oxide stack to enhance photovoltaic performance through optical sensitization and interfacial modulation. By tuning the PbS precursor concentration, an appropriate QD loading window was identified. Increasing PbS loading enhanced optical absorption and improved the interfacial effect at the PbS/BCFO junction, whereas excessive loading caused aggregation and non-uniform overlayer thickening, leading to increased carrier-transport losses. As a result, the photocurrent increased with PbS loading, while the power conversion efficiency (PCE) exhibited a volcano-type dependence, reaching a maximum at 0.0075 M with a short-circuit current density (<i>J</i><sub>sc</sub>) of 2.431 mA&#xa0;cm<sup>−2</sup>, an open-circuit voltage (<i>V</i><sub>oc</sub>) of 0.872&#xa0;V, a fill factor (<i>FF</i>) of 58.3%, and a PCE of 1.235%, markedly improved compared with the pristine device, together with a stable light on/off response. These results highlight that controlling QD loading, rather than simply maximizing sensitizer content, is critical for achieving reliable performance enhancement in QD/oxide composite photovoltaics.</p>

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Optimal PbS quantum-dot loading in composition-graded Bi1-xCaxFeO3 stacks for improved photovoltaic performance

  • 期刊论文

  • 发表日期：

    2026年4月19日

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  • Weihao Wu,
  • Zhongxiang Zheng,
  • Xiaoyu Luo,
  • Shubao Yang,
  • Wenchuan Li,
  • Rongli Gao,
  • Xiaoling Deng,
  • Wei Cai,
  • Chunlin Fu

摘要

A PbS quantum-dot (QD) interfacial layer was integrated with a composition-graded Bi1−xCaxFeO3 (BCFO) oxide stack to enhance photovoltaic performance through optical sensitization and interfacial modulation. By tuning the PbS precursor concentration, an appropriate QD loading window was identified. Increasing PbS loading enhanced optical absorption and improved the interfacial effect at the PbS/BCFO junction, whereas excessive loading caused aggregation and non-uniform overlayer thickening, leading to increased carrier-transport losses. As a result, the photocurrent increased with PbS loading, while the power conversion efficiency (PCE) exhibited a volcano-type dependence, reaching a maximum at 0.0075 M with a short-circuit current density (Jsc) of 2.431 mA cm−2, an open-circuit voltage (Voc) of 0.872 V, a fill factor (FF) of 58.3%, and a PCE of 1.235%, markedly improved compared with the pristine device, together with a stable light on/off response. These results highlight that controlling QD loading, rather than simply maximizing sensitizer content, is critical for achieving reliable performance enhancement in QD/oxide composite photovoltaics.