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<p>Despite the versatile photophysical properties of quantum dots (QDs), the toxicity, potential health risks, and environmental impacts of widely used Cd or Pb-based QDs have motivated a search for QDs based on nontoxic alternatives. Indium phosphide (InP) QDs are one of the most promising types of III–V semiconducting nanocrystals due to the wide tunability of their emission wavelength and the non-toxicity of InP. Although InP QDs have desirable properties, it is difficult to achieve blue emission with pure InP QDs. Alloying with other elements to increase the bandgap is one approach to achieve blue emission. Ga is in the same group as In; GaP has a larger bandgap (2.27&#xa0;eV) compared to InP (1.35&#xa0;eV) but shares the same zinc blende crystal structure, so we explored the use of Ga as an alloying element in InP QDs. InGaP alloys have previously been reported in multi-step processes involving ion-exchange; in this work, we demonstrate the synthesis of InGaP QDs using a one-pot method using a stoichiometric excess of Ga, while limiting the amount of In in the reaction. InGaP cores were synthesized at different ratios of In to Ga and blue-shifts of absorption peaks were confirmed with increasing Ga content. After shell growth of high Ga-content cores, InGaP QDs showed sky-blue fluorescence, close to the blue emission necessary for display applications and blue-shifted compared to pure InP QDs. The photoluminescence quantum yield and full-width at half-maximum of the emission from InGaP QDs were 49.9% and 60&#xa0;nm at 491&#xa0;nm, respectively.</p>

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One-pot synthesis and blue-shifted emission of In(Ga)P quantum dots

  • 期刊论文

  • 发表日期：

    2026年4月27日

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  • Yohan Ahn,
  • Thuy Truong,
  • Jianne Kim,
  • Bright Walker,
  • Jang Hyuk Kwon

摘要

Despite the versatile photophysical properties of quantum dots (QDs), the toxicity, potential health risks, and environmental impacts of widely used Cd or Pb-based QDs have motivated a search for QDs based on nontoxic alternatives. Indium phosphide (InP) QDs are one of the most promising types of III–V semiconducting nanocrystals due to the wide tunability of their emission wavelength and the non-toxicity of InP. Although InP QDs have desirable properties, it is difficult to achieve blue emission with pure InP QDs. Alloying with other elements to increase the bandgap is one approach to achieve blue emission. Ga is in the same group as In; GaP has a larger bandgap (2.27 eV) compared to InP (1.35 eV) but shares the same zinc blende crystal structure, so we explored the use of Ga as an alloying element in InP QDs. InGaP alloys have previously been reported in multi-step processes involving ion-exchange; in this work, we demonstrate the synthesis of InGaP QDs using a one-pot method using a stoichiometric excess of Ga, while limiting the amount of In in the reaction. InGaP cores were synthesized at different ratios of In to Ga and blue-shifts of absorption peaks were confirmed with increasing Ga content. After shell growth of high Ga-content cores, InGaP QDs showed sky-blue fluorescence, close to the blue emission necessary for display applications and blue-shifted compared to pure InP QDs. The photoluminescence quantum yield and full-width at half-maximum of the emission from InGaP QDs were 49.9% and 60 nm at 491 nm, respectively.