Scholarlink

<p>This work presents a systematic study of silicon (Si) and magnesium (Mg) doping effects on the structural and electrical properties of non-polar a-plane (11̅20) GaN grown on r-plane (1̅102) sapphire by metal–organic chemical vapor deposition. Compared with conventional c-plane GaN, a-plane GaN eliminates internal polarization fields, making it attractive for optoelectronic applications. N-type and p-type layers were doped using disilane (Si₂H₆) and bis(cyclopentadienyl)magnesium (Cp₂Mg), respectively. Atomic force microscopy (AFM) revealed increased surface roughness with dopant incorporation, while high-resolution X-ray diffraction (XRD) indicated higher basal stacking fault densities at elevated doping levels. Hall Effect measurements showed maximum carrier concentrations of 4.94 × 10<sup>19</sup> cm<sup>−3</sup> for electrons and 2.13 × 10<sup>18</sup> cm<sup>−3</sup> for holes. Correspondingly, the specific contact resistivity decreased to 8.88 × 10<sup>−5</sup> Ω·cm<sup>2</sup> for n-type and 2.28 × 10<sup>−3</sup> Ω·cm<sup>2</sup> for p-type GaN. These results highlight the trade-off between electrical enhancement and structural degradation, providing guidelines for optimizing non-polar GaN epitaxy.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

The trade-off between electrical performance and structural quality in silicon (n-type) and magnesium (p-type)-doped a-plane gallium nitride (GaN) on r-plane sapphire

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月5日

查看全文
  • Nor Hapishah Abdullah,
  • Ahmad Shuhaimi Abu Bakar,
  • Muhammad Imran Mustafa Abdul Khudus,
  • Muhammad Syazwan Mustaffa,
  • Anas Kamarundzaman,
  • Norhaniza Rizuan,
  • Nurin Jazlina Zaidi

摘要

This work presents a systematic study of silicon (Si) and magnesium (Mg) doping effects on the structural and electrical properties of non-polar a-plane (11̅20) GaN grown on r-plane (1̅102) sapphire by metal–organic chemical vapor deposition. Compared with conventional c-plane GaN, a-plane GaN eliminates internal polarization fields, making it attractive for optoelectronic applications. N-type and p-type layers were doped using disilane (Si₂H₆) and bis(cyclopentadienyl)magnesium (Cp₂Mg), respectively. Atomic force microscopy (AFM) revealed increased surface roughness with dopant incorporation, while high-resolution X-ray diffraction (XRD) indicated higher basal stacking fault densities at elevated doping levels. Hall Effect measurements showed maximum carrier concentrations of 4.94 × 1019 cm−3 for electrons and 2.13 × 1018 cm−3 for holes. Correspondingly, the specific contact resistivity decreased to 8.88 × 10−5 Ω·cm2 for n-type and 2.28 × 10−3 Ω·cm2 for p-type GaN. These results highlight the trade-off between electrical enhancement and structural degradation, providing guidelines for optimizing non-polar GaN epitaxy.