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<p>CuO nanoparticles (NPs), WO₃ NPs, and a CuO–WO₃ nanocomposite (NC) were synthesized and investigated for optoelectronic applications. XRD results confirmed monoclinic CuO and WO<sub>3</sub> phases, while the CuO–WO<sub>3</sub> NC exhibited phase coexistence without secondary impurities, indicating high phase purity, with a reduced crystallite size of 29.28&#xa0;nm. Morphological and elemental analyses using SEM, EDX, and elemental mapping revealed uniform particle distribution and the formation of a well-defined CuO–WO<sub>3</sub> composite. FTIR and XPS analyses confirmed characteristic metal–oxygen bonding, stable Cu<sup>2+</sup> and W<sup>6+</sup> oxidation states, and good stoichiometric integrity. UV–Vis spectroscopy showed enhanced optical absorption and a reduced bandgap (E<sub>g</sub> = 1.41&#xa0;eV) for the CuO–WO<sub>3</sub> NC. Ag/CuO/n-Si, Ag/WO₃/n-Si, and Ag/CuO–WO₃/n-Si photodiodes were fabricated by a simple drop-casting method and characterized using current–voltage (I–V) measurements under dark and illuminated conditions. The CuO–WO<sub>3</sub>/n-Si device exhibited pronounced rectifying behavior and improved junction quality. Diode parameters extracted using thermionic emission (TE) theory, Norde, and Cheung methods revealed reduced ideality factor, barrier height, and series resistance under illumination. The CuO–WO<sub>3</sub>/n-Si photodiode demonstrated superior performance with high photosensitivity (P<sub>S</sub> = 669.98%), responsivity (R = 342.71&#xa0;mA/W), EQE (187.19%), detectivity (D<sup>*</sup> = 3.37 × 10<sup>11</sup> Jones), and noise equivalent power (NEP = 0.263 pW Hz<sup>−1/2</sup>) highlighting its potential for low-cost optoelectronic and photodetector applications.</p>

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Synthesis and characterization of CuO–WO3 nanocomposite for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2026年4月8日

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  • H. Premkumar,
  • Elumalai Arulkumar,
  • S. Vadivel,
  • Essam H. Ibrahim

摘要

CuO nanoparticles (NPs), WO₃ NPs, and a CuO–WO₃ nanocomposite (NC) were synthesized and investigated for optoelectronic applications. XRD results confirmed monoclinic CuO and WO3 phases, while the CuO–WO3 NC exhibited phase coexistence without secondary impurities, indicating high phase purity, with a reduced crystallite size of 29.28 nm. Morphological and elemental analyses using SEM, EDX, and elemental mapping revealed uniform particle distribution and the formation of a well-defined CuO–WO3 composite. FTIR and XPS analyses confirmed characteristic metal–oxygen bonding, stable Cu2+ and W6+ oxidation states, and good stoichiometric integrity. UV–Vis spectroscopy showed enhanced optical absorption and a reduced bandgap (Eg = 1.41 eV) for the CuO–WO3 NC. Ag/CuO/n-Si, Ag/WO₃/n-Si, and Ag/CuO–WO₃/n-Si photodiodes were fabricated by a simple drop-casting method and characterized using current–voltage (I–V) measurements under dark and illuminated conditions. The CuO–WO3/n-Si device exhibited pronounced rectifying behavior and improved junction quality. Diode parameters extracted using thermionic emission (TE) theory, Norde, and Cheung methods revealed reduced ideality factor, barrier height, and series resistance under illumination. The CuO–WO3/n-Si photodiode demonstrated superior performance with high photosensitivity (PS = 669.98%), responsivity (R = 342.71 mA/W), EQE (187.19%), detectivity (D* = 3.37 × 1011 Jones), and noise equivalent power (NEP = 0.263 pW Hz−1/2) highlighting its potential for low-cost optoelectronic and photodetector applications.