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<p>In the present study, the thermoelectric performance of AgSbTe<sub>2</sub> thin films was enhanced through a post-deposition annealing strategy. AgSbTe<sub>2</sub> powder was synthesized via melt quenching and confirmed to exhibit a cubic structure using Rietveld refinement analysis. Thin films were deposited by thermal evaporation and subsequently annealed at different temperatures. At room temperature (RT), a maximum electrical conductivity (<i>σ</i>) of 4.12 × 10<sup>4</sup>&#xa0;S&#xa0;m<sup>−1</sup> and power factor (PF) of 1264.6&#xa0;µW&#xa0;m<sup>−1</sup>&#xa0;K<sup>−2</sup> were obtained post annealing at 90&#xa0;°C. Hall measurements were performed to estimate the carrier concentration (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({n}_{\text{H}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>n</mi> <mtext>H</mtext> </msub> </math></EquationSource> </InlineEquation>) and mobility (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({\mu }_{\text{H}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>μ</mi> <mtext>H</mtext> </msub> </math></EquationSource> </InlineEquation>). Thermoelectric properties were investigated up to 110&#xa0;°C and at RT (300&#xa0;K) after thermal annealing at each temperature for 5&#xa0;h. The improvement in conductivity is attributed to the reduced band gap, increased crystallite size, preferential growth orientation, and enhanced carrier concentration. Maximum Seebeck coefficient (<i>S</i>) value of 404.5&#xa0;μVK<sup>−1</sup> at RT was obtained for without annealed film (AST-AS). Structural, optical, and morphological analyses confirmed strain relaxation, crystallite growth, and a band gap of 1.43&#xa0;eV, with a film thickness of 162&#xa0;nm. Topographical features of film surfaces were examined with an Atomic Force Microscope (AFM) for the construction of 3D surface mapping and determination of surface roughness.</p>

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Enhancing room temperature thermoelectric power factor of AgSbTe2 thin films via thermal annealing

  • 期刊论文

  • 发表日期：

    2026年4月17日

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  • Ritika Sangwan,
  • Avinash Kumar,
  • S. K. Tripathi

摘要

In the present study, the thermoelectric performance of AgSbTe2 thin films was enhanced through a post-deposition annealing strategy. AgSbTe2 powder was synthesized via melt quenching and confirmed to exhibit a cubic structure using Rietveld refinement analysis. Thin films were deposited by thermal evaporation and subsequently annealed at different temperatures. At room temperature (RT), a maximum electrical conductivity (σ) of 4.12 × 104 S m−1 and power factor (PF) of 1264.6 µW m−1 K−2 were obtained post annealing at 90 °C. Hall measurements were performed to estimate the carrier concentration ( \({n}_{\text{H}}\) n H ) and mobility ( \({\mu }_{\text{H}}\) μ H ). Thermoelectric properties were investigated up to 110 °C and at RT (300 K) after thermal annealing at each temperature for 5 h. The improvement in conductivity is attributed to the reduced band gap, increased crystallite size, preferential growth orientation, and enhanced carrier concentration. Maximum Seebeck coefficient (S) value of 404.5 μVK−1 at RT was obtained for without annealed film (AST-AS). Structural, optical, and morphological analyses confirmed strain relaxation, crystallite growth, and a band gap of 1.43 eV, with a film thickness of 162 nm. Topographical features of film surfaces were examined with an Atomic Force Microscope (AFM) for the construction of 3D surface mapping and determination of surface roughness.