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<p>The intrinsic cycle-to-cycle variability in resistive random access memory (RRAM) devices supports their suitability as seed sources in circuits requiring stochastic input. This article presents the fabrication, characterization, and analysis of FTO/HfO<sub>2</sub>/Ag, FTO/HfO<sub>2</sub>/Cu, and co-sputtering (CS) FTO/HfO<sub>2</sub>-SiO<sub>2</sub>/Ag RRAMs for hardware security and stochastic applications. The RRAM switching-layer thin film has been deposited by radio frequency (RF) sputtering, and silver (Ag) and copper (Cu) electrodes were used to tune the switching behavior. Statistical analysis of cycle-to-cycle variability shows a coefficient of variation (CV) of <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\sim\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>∼</mo> </math></EquationSource> </InlineEquation>0.32 for FTO/HfO<sub>2</sub>/Ag and <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\sim\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>∼</mo> </math></EquationSource> </InlineEquation>0.088 for FTO/HfO<sub>2</sub>/Cu devices. It supports the possible suitability of the Ag-based devices for high-variability applications and the ability to control RRAM variability through fabrication choices. These controllable characteristics suggest proposed nanofabricated devices as possible candidates for applications in hardware security primitives, secure memory elements in low-power hardware, and Internet of Things (IoT) platforms.</p>

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Electrode-engineering on HfO2-based RRAM for variability control and hardware security

  • 期刊论文

  • 发表日期：

    2026年4月14日

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  • Madhuram Mishra,
  • Sunil Babu Eadi,
  • Rajat Kumar Goyal,
  • Pragya Kushwaha,
  • Pranay Ranjan,
  • Devendra Singh Negi,
  • Harshit Agarwal

摘要

The intrinsic cycle-to-cycle variability in resistive random access memory (RRAM) devices supports their suitability as seed sources in circuits requiring stochastic input. This article presents the fabrication, characterization, and analysis of FTO/HfO2/Ag, FTO/HfO2/Cu, and co-sputtering (CS) FTO/HfO2-SiO2/Ag RRAMs for hardware security and stochastic applications. The RRAM switching-layer thin film has been deposited by radio frequency (RF) sputtering, and silver (Ag) and copper (Cu) electrodes were used to tune the switching behavior. Statistical analysis of cycle-to-cycle variability shows a coefficient of variation (CV) of \(\sim\) ∼ 0.32 for FTO/HfO2/Ag and \(\sim\) ∼ 0.088 for FTO/HfO2/Cu devices. It supports the possible suitability of the Ag-based devices for high-variability applications and the ability to control RRAM variability through fabrication choices. These controllable characteristics suggest proposed nanofabricated devices as possible candidates for applications in hardware security primitives, secure memory elements in low-power hardware, and Internet of Things (IoT) platforms.