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<p>This work investigates and compares the effects of edge-terminated ion implantation on the temperature-dependence electrical characteristics for two types of 4H-SiC diodes. For the edge termination without ion implantation, <i>p</i>-type island with dedicated design forms via plasma etching of the epitaxially deposited layer on the drift region. In comparison, with p + ion implantation, conventional field-limited rings structure is formed in the drift region. The forward and reverse voltage-current behaviors of the two devices were tested from 25 to 175&#xa0;°C and the underlying reasons for the differences are elaborated. In terms of the reverse characteristic, the diode without ion implantation exhibits significantly lower reverse leakage than the diode with ion implantation at operating temperatures below 125&#xa0;°C. However, beyond the temperature, a larger leakage current is observed in the diode with p-type island termination. The physical mechanism established to explain the observation was complemented with the simulation done by the Technology Computer-Aided Design. The above research clearly demonstrates that the forward characteristics of SiC diode without ion implantation are almost identical to those of commercial devices, but the reverse leakage current is significantly reduced at least below 125&#xa0;°C, making it an excellent choice for low loss SiC power devices.</p>

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Forward and reverse characteristics of 4H-SiC Schottky diodes with and without ion implantation and its temperature dependent properties

  • 期刊论文

  • 发表日期：

    2026年4月6日

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  • Zicheng Lu,
  • Yingxin Cui,
  • Fanpeng Zeng,
  • Lingling Lai,
  • Zhixin Liu,
  • Kuan Yew Cheong,
  • Jisheng Han

摘要

This work investigates and compares the effects of edge-terminated ion implantation on the temperature-dependence electrical characteristics for two types of 4H-SiC diodes. For the edge termination without ion implantation, p-type island with dedicated design forms via plasma etching of the epitaxially deposited layer on the drift region. In comparison, with p + ion implantation, conventional field-limited rings structure is formed in the drift region. The forward and reverse voltage-current behaviors of the two devices were tested from 25 to 175 °C and the underlying reasons for the differences are elaborated. In terms of the reverse characteristic, the diode without ion implantation exhibits significantly lower reverse leakage than the diode with ion implantation at operating temperatures below 125 °C. However, beyond the temperature, a larger leakage current is observed in the diode with p-type island termination. The physical mechanism established to explain the observation was complemented with the simulation done by the Technology Computer-Aided Design. The above research clearly demonstrates that the forward characteristics of SiC diode without ion implantation are almost identical to those of commercial devices, but the reverse leakage current is significantly reduced at least below 125 °C, making it an excellent choice for low loss SiC power devices.