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<p>This work demonstrates the fabrication of Cd<sub><i>1-x</i></sub>Pb<sub><i>x</i></sub>S thin films on fluorine-doped tin oxide (FTO) substrates by using chemical bath deposition (CBD), a simple chemical route, at different Pb concentrations. Preliminary examination suggested optimum preparative parameters: bath temperature 80&#xa0;°C, pH 11–12, and solution stirring rate 60&#xa0;rpm for a 60-min deposition time. Changes in morphology and dimensions are carefully examined using high-resolution FE-SEM micrographs, which reveal modifications in the reaction and growth mechanism on the surface of the films within the solution at different Pb concentrations in the bath solution. This results in the formation of 10–40-nm-sized nanocomposites of different spherical, petaloid, petaloid-cluster mixed, and purely cluster-type growth, which significantly affects the overall properties of the films. The optical band gap of the films was found to vary from ~ 2.27 to 1.6&#xa0;eV. XRD analysis confirms both CdS and PbS phase formation, having hexagonal and cubic crystal structures grown along (111) and (200) planes, respectively. In addition, these deposited thin film-film based 1 cm<sup>2</sup> active-sized self-powered PEC device with polysulphide electrolyte devices showed rectifying semiconductor I–V curves in both dark and light conditions at standard circumstances. The present work successfully described the modification in the reaction or growth mechanism after the incorporation of Pb ions into the solution. The work also demonstrated that Pb incorporation into the CdS precursor is an effective route to tailor structural, morphological, and electronic properties for cost-effective, self-powered photodetectors and related PEC optoelectronic devices. These findings are built on earlier reports of Pb-modified CdS nanocomposite thin-film and self-powered&#xa0;thin-film photodetectors and point to compositional engineering as a practical strategy to optimize charge separation and carrier collection in solution-processed sulphide devices.</p>

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Structural evolution and optoelectronic enhancement of Cd1-xPbxS thin films for self-powered PEC photodetectors

  • 期刊论文

  • 发表日期：

    2026年4月3日

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  • Hemant S. Tarkas,
  • Kiran E. Suryawanshi

摘要

This work demonstrates the fabrication of Cd1-xPbxS thin films on fluorine-doped tin oxide (FTO) substrates by using chemical bath deposition (CBD), a simple chemical route, at different Pb concentrations. Preliminary examination suggested optimum preparative parameters: bath temperature 80 °C, pH 11–12, and solution stirring rate 60 rpm for a 60-min deposition time. Changes in morphology and dimensions are carefully examined using high-resolution FE-SEM micrographs, which reveal modifications in the reaction and growth mechanism on the surface of the films within the solution at different Pb concentrations in the bath solution. This results in the formation of 10–40-nm-sized nanocomposites of different spherical, petaloid, petaloid-cluster mixed, and purely cluster-type growth, which significantly affects the overall properties of the films. The optical band gap of the films was found to vary from ~ 2.27 to 1.6 eV. XRD analysis confirms both CdS and PbS phase formation, having hexagonal and cubic crystal structures grown along (111) and (200) planes, respectively. In addition, these deposited thin film-film based 1 cm2 active-sized self-powered PEC device with polysulphide electrolyte devices showed rectifying semiconductor I–V curves in both dark and light conditions at standard circumstances. The present work successfully described the modification in the reaction or growth mechanism after the incorporation of Pb ions into the solution. The work also demonstrated that Pb incorporation into the CdS precursor is an effective route to tailor structural, morphological, and electronic properties for cost-effective, self-powered photodetectors and related PEC optoelectronic devices. These findings are built on earlier reports of Pb-modified CdS nanocomposite thin-film and self-powered thin-film photodetectors and point to compositional engineering as a practical strategy to optimize charge separation and carrier collection in solution-processed sulphide devices.