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<p>The effects of Ar plasma treatment on the electrical performance and the stability of amorphous Si–In–Zn–O (a-SIZO) thin-film transistors (TFTs) were investigated with a focus on oxygen vacancy (<i>V</i><sub><i>O</i></sub>) modulation. Short plasma exposure (≤ 30&#xa0;s) improved the field-effect mobility (<i>µ</i><sub><i>FE</i></sub>) from 14.5 to 15.8 cm<sup>2</sup>/V·s while maintaining stable subthreshold swing (<i>S.S.</i>) and threshold voltage (<i>V</i><sub><i>TH</i></sub>). In contrast, prolonged plasma exposure (≥ 1&#xa0;min) resulted in a <i>V</i><sub><i>TH</i></sub> shift from 8.70&#xa0;V to 3.49&#xa0;V and degradation of <i>S.S.</i> from 0.481 to 0.813&#xa0;V/decade, along with significant increases in hysteresis (1.60 → 6.76&#xa0;V) and <i>ΔV</i><sub><i>TH</i></sub> (1.17 → 12.06&#xa0;V). X-ray photoelectron spectroscopy (XPS) analysis revealed that the <i>V</i><sub><i>O</i></sub> concentration increased from 26.28% to 36.03% (1&#xa0;min treated) with increasing plasma treatment time, originating from Ar ion-induced M–O bond breaking. A moderate increase in <i>V</i><sub><i>O</i></sub> enhances carrier transport, whereas excessive <i>V</i><sub><i>O</i></sub> generation induces trap states. Density of state (DoS) analysis confirmed that trap density increased with plasma exposure, showing a quantitative correlation with <i>V</i><sub><i>O</i></sub> concentration, where bulk traps (DoS, <i>N</i><sub><i>T</i></sub>) and interface traps (hysteresis) were distinguished. These results demonstrate that Ar plasma treatment induces a trade-off between electrical performance and stability through <i>V</i><sub><i>O</i></sub>-controlled defect formation, highlighting the importance of precise plasma condition optimization.</p>

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Effect of oxygen vacancy control on the electrical performance and stability of amorphous Si–In–Zn–O thin-film transistors by adopting Ar plasma treatment

  • 期刊论文

  • 发表日期：

    2026年3月28日

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  • Taeho Kim,
  • Mirang Byeon,
  • Sang Yeol Lee

摘要

The effects of Ar plasma treatment on the electrical performance and the stability of amorphous Si–In–Zn–O (a-SIZO) thin-film transistors (TFTs) were investigated with a focus on oxygen vacancy (VO) modulation. Short plasma exposure (≤ 30 s) improved the field-effect mobility (µFE) from 14.5 to 15.8 cm2/V·s while maintaining stable subthreshold swing (S.S.) and threshold voltage (VTH). In contrast, prolonged plasma exposure (≥ 1 min) resulted in a VTH shift from 8.70 V to 3.49 V and degradation of S.S. from 0.481 to 0.813 V/decade, along with significant increases in hysteresis (1.60 → 6.76 V) and ΔVTH (1.17 → 12.06 V). X-ray photoelectron spectroscopy (XPS) analysis revealed that the VO concentration increased from 26.28% to 36.03% (1 min treated) with increasing plasma treatment time, originating from Ar ion-induced M–O bond breaking. A moderate increase in VO enhances carrier transport, whereas excessive VO generation induces trap states. Density of state (DoS) analysis confirmed that trap density increased with plasma exposure, showing a quantitative correlation with VO concentration, where bulk traps (DoS, NT) and interface traps (hysteresis) were distinguished. These results demonstrate that Ar plasma treatment induces a trade-off between electrical performance and stability through VO-controlled defect formation, highlighting the importance of precise plasma condition optimization.