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<p>Oxide semiconductors are attracting great interest for next-generation thin-film transistors (TFTs), with indium gallium zinc oxide (IGZO) leading much of the progress. However, the high cost and scarcity of indium and gallium motivate the search for alternatives based on more abundant elements such as zinc oxide (ZnO) and tin oxide (SnO<sub>2</sub>). Single-layer ZnO TFTs exhibit stable operation but are limited by low on-current and a high subthreshold swing (SS). In contrast, single-layer SnO<sub>2</sub> TFTs provide high on-current but suffer from poor stability and high off-current due to uncontrolled oxygen vacancies. To overcome these limitations, a bilayer structure was employed, leveraging the strengths of each material while compensating for their weaknesses. Devices with ZnO/ultrathin SnO<sub>2</sub> and SnO<sub>2</sub>/ultrathin ZnO configurations were fabricated and characterized. The bilayer structures demonstrated significantly improved electrical performance, including enhanced mobility and on/off ratio. The introduction of the ultrathin complementary layer, approximately 10&#xa0;nm in thickness, was found to be particularly effective in improving both performance and stability.</p>

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Performance enhancement of solution-processed metal-oxide TFTs based on zinc acrylate/tin ethylhexanoate bilayer structures

  • 期刊论文

  • 发表日期：

    2026年3月31日

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  • Miso Shin,
  • Seong Woo Jo,
  • Yong-Wook Jeong,
  • Yong Jin Jeong

摘要

Oxide semiconductors are attracting great interest for next-generation thin-film transistors (TFTs), with indium gallium zinc oxide (IGZO) leading much of the progress. However, the high cost and scarcity of indium and gallium motivate the search for alternatives based on more abundant elements such as zinc oxide (ZnO) and tin oxide (SnO2). Single-layer ZnO TFTs exhibit stable operation but are limited by low on-current and a high subthreshold swing (SS). In contrast, single-layer SnO2 TFTs provide high on-current but suffer from poor stability and high off-current due to uncontrolled oxygen vacancies. To overcome these limitations, a bilayer structure was employed, leveraging the strengths of each material while compensating for their weaknesses. Devices with ZnO/ultrathin SnO2 and SnO2/ultrathin ZnO configurations were fabricated and characterized. The bilayer structures demonstrated significantly improved electrical performance, including enhanced mobility and on/off ratio. The introduction of the ultrathin complementary layer, approximately 10 nm in thickness, was found to be particularly effective in improving both performance and stability.