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<p>Photodetectors based on metal-oxide nanostructures often struggle with slow response times and inefficient charge transport due to interfacial defects and limited carrier pathways. In this work, we combine glancing angle deposition (GLAD) with electron-beam evaporation to grow TiO<sub>2</sub> nanowires and decorate them with annealed, mushroom-shaped indium caps. This simple morphological modification creates an enlarged metal–semiconductor contact area and strengthens the local electric field at the junction, improving carrier separation and transport. The unique indium morphology was achieved by optimizing GLAD parameters, while n-type Si served as the substrate and Cu contacts served as the electrode. Structural and compositional characterizations were performed using field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), elemental mapping, and X-ray diffraction (XRD). The XRD results confirmed the formation of TiO<sub>2</sub> in the anatase phase along with indium’s tetragonal-phase structure. UV–Vis spectroscopy results exhibited absorption bands around 250&#xa0;nm, 400–440&#xa0;nm, and extending past 600&#xa0;nm, confirming the broad optical response of the device. Electrical measurements revealed an ideality factor of 13.6, a high detectivity (<i>D</i>*) of 4.58 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\times\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>×</mo> </math></EquationSource> </InlineEquation> 10<sup>8</sup> Jones, and a low noise equivalent power (NEP) of 2.90 × 10<sup>−10</sup> W. Furthermore, transient photoresponse measurements demonstrated improved switching behavior with rise and fall times of 0.08&#xa0;s and 0.08&#xa0;s, respectively. These results suggest that morphological control of indium through GLAD-based interface engineering plays a significant role in enhancing the optoelectronic performance of TiO<sub>2</sub> nanostructure-based photodetectors.</p>

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Synergistic enhancement of photodetector performance using annealed mushroom-shaped indium caps on GLAD-engineered TiO2 nanowires

  • 期刊论文

  • 发表日期：

    2026年3月30日

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  • Shubhajit Vishwas,
  • Abhijit Das,
  • David Chidambaram,
  • Mitra Barun Sarkar

摘要

Photodetectors based on metal-oxide nanostructures often struggle with slow response times and inefficient charge transport due to interfacial defects and limited carrier pathways. In this work, we combine glancing angle deposition (GLAD) with electron-beam evaporation to grow TiO2 nanowires and decorate them with annealed, mushroom-shaped indium caps. This simple morphological modification creates an enlarged metal–semiconductor contact area and strengthens the local electric field at the junction, improving carrier separation and transport. The unique indium morphology was achieved by optimizing GLAD parameters, while n-type Si served as the substrate and Cu contacts served as the electrode. Structural and compositional characterizations were performed using field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), elemental mapping, and X-ray diffraction (XRD). The XRD results confirmed the formation of TiO2 in the anatase phase along with indium’s tetragonal-phase structure. UV–Vis spectroscopy results exhibited absorption bands around 250 nm, 400–440 nm, and extending past 600 nm, confirming the broad optical response of the device. Electrical measurements revealed an ideality factor of 13.6, a high detectivity (D*) of 4.58 \(\times\) × 108 Jones, and a low noise equivalent power (NEP) of 2.90 × 10−10 W. Furthermore, transient photoresponse measurements demonstrated improved switching behavior with rise and fall times of 0.08 s and 0.08 s, respectively. These results suggest that morphological control of indium through GLAD-based interface engineering plays a significant role in enhancing the optoelectronic performance of TiO2 nanostructure-based photodetectors.