Dielectric relaxation and electron transport in CdMn2O4 nanoparticles
摘要
This research study analyzes the dielectric properties and conduction mechanism in CdMn2O4 nanoparticles. The synthesis of CdMn2O4 nanoparticles was achieved through the solid-state reaction process. Through XRD analysis, the crystal structure and crystallite size of CdMn2O4 were determined to be tetragonal and 22.15 nm, respectively. The surface morphology and chemical homogeneity were also investigated using scanning electron microscopy (SEM) along with energy dispersive X-ray analysis (EDAX). To study the AC electrical properties, impedance spectroscopy was conducted from 928 Hz to 2 MHz and at temperatures of 370 K–470 K. The Nyquist plot of CdMn2O4 nanoparticles showed a space-charge-dependent behavior. Dielectric permittivity exhibited dispersion at low frequencies and the dielectric loss was also observed to directly depend on temperature. AC conductivity behavior was consistent with Jonscher’s power law, where a tendency of the s-parameter to reduce with increasing temperature suggests the correlated barrier hopping conduction mechanism (CBH). Hopping distance and density of states (DOS) were estimated using this model. Current–voltage (IV) measurements at different temperatures showed a linear dependency between current and voltage, which is a characteristic of an ohmic material.