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<p>In this work, the structural, compositional, electrical, and thermoelectric properties of nickel (Ni)-doped Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films are investigated. The thin films were synthesized via sol–gel spin-coating route followed by post-sulfurization in a tube furnace. Four samples with different Ni concentrations (5%, 10%, 15%, and 20%) were prepared to evaluate the effect of Ni incorporation on charge carrier transport and thermoelectric performance. The XRD confirmed the preservation of the kesterite CZTS crystal structure after doping, with the appearance of minor secondary phases at higher Ni concentrations. The SEM revealed a granular surface morphology with an increase in grain size as the Ni content increased, while EDS verified the elemental composition of the thin films. The electrical conductivity significantly improved with increasing Ni concentration, increasing from 18.01 S/cm for the 5% Ni-doped film to 39.30 S/cm for the 20% Ni-doped sample, mainly due to increased carrier concentration. However, carrier mobility decreased with higher Ni doping, likely due to enhanced impurity scattering. The Seebeck coefficient remained positive for all prepared samples, confirming p-type conductivity, with a maximum value of 261.09&#xa0;µV/K observed for the 5% Ni-doped film. The maximum thermoelectric power factor of 1.62 µWcm<sup>−1</sup>&#xa0;K<sup>−2</sup> was achieved for the 10% Ni-doped sample in the mid-temperature range. These findings demonstrate that controlled Ni doping has effectively improved the power factor of CZTS films, demonstrating their suitability for thermoelectric energy harvesting.</p>

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Enhanced power factor in Ni-doped Cu2ZnSnS4 thin films through carrier concentration engineering

  • 期刊论文

  • 发表日期：

    2026年4月15日

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  • Rasmiah S. Almufarij,
  • Shoug M. Alghamdi,
  • Jack Arayro,
  • Elsammani Ali Shokralla,
  • Mohamed A. Siddig,
  • Mohamed Abdelsabour Fahmy,
  • Youssef Trabelsi,
  • Abdulaziz M. Alanazi,
  • Romulo R. Macadangdang Jr.,
  • Arslan Ashfaq

摘要

In this work, the structural, compositional, electrical, and thermoelectric properties of nickel (Ni)-doped Cu2ZnSnS4 (CZTS) thin films are investigated. The thin films were synthesized via sol–gel spin-coating route followed by post-sulfurization in a tube furnace. Four samples with different Ni concentrations (5%, 10%, 15%, and 20%) were prepared to evaluate the effect of Ni incorporation on charge carrier transport and thermoelectric performance. The XRD confirmed the preservation of the kesterite CZTS crystal structure after doping, with the appearance of minor secondary phases at higher Ni concentrations. The SEM revealed a granular surface morphology with an increase in grain size as the Ni content increased, while EDS verified the elemental composition of the thin films. The electrical conductivity significantly improved with increasing Ni concentration, increasing from 18.01 S/cm for the 5% Ni-doped film to 39.30 S/cm for the 20% Ni-doped sample, mainly due to increased carrier concentration. However, carrier mobility decreased with higher Ni doping, likely due to enhanced impurity scattering. The Seebeck coefficient remained positive for all prepared samples, confirming p-type conductivity, with a maximum value of 261.09 µV/K observed for the 5% Ni-doped film. The maximum thermoelectric power factor of 1.62 µWcm−1 K−2 was achieved for the 10% Ni-doped sample in the mid-temperature range. These findings demonstrate that controlled Ni doping has effectively improved the power factor of CZTS films, demonstrating their suitability for thermoelectric energy harvesting.