Conductivity through localized states in TlSe1-xSx (0 ≤ x ≤ 0.5, Δx = 0.1) solid solutions
摘要
The dc conductivity in the temperature range 130–300 K, as well as the ac conductivity, the complex dielectric constant, and the tangent of the dielectric loss angle at 300 K, were investigated for TlSe1-xSx (0 ≤ x ≤ 0.5, Δx = 0.1) solid solutions. The presence of dispersive relaxation was observed in the frequency dependences of the dielectric properties. The hopping conductivity parameters for localized states near the Fermi level were calculated based on the Mott’s Variable-Range Hopping (VRH) model for both ac and dc fields, and the variation of these parameters with depending on the concentration of solid solutions was observed. An increase in sulfur content in TlSe1-xSx solid solutions, the frequency and temperature ranges in which the hopping conductivity occurs are bring about to broadening toward lower frequency and lower temperature regions. This behavior is attributed to the additional disorder the solid solution.