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<p>Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) has been recognized as a very promising absorber material for the inorganic thin-film solar cells owing to its suitable optical and electrical properties. Further, its earth-abundant constituents offer potential fabrication of a low-cost solar cell. Among different deposition techniques, sputtering is well recognized as a suitable route for the scalable production of thin films in the optoelectronics technology. In this work, we report the growth of CZTS thin films by radio frequency (RF) magnetron sputtering using a compound target which was sintered at 300&#xa0;℃. The films were deposited on soda-lime glass (SLG) substrates at different temperatures in the range of 300–500&#xa0;℃. The role of substrate temperature in the CZTS phase growth and its influence on various properties of the deposited thin films were studied by using XRD, Raman, FESEM, EDS, UV–Vis spectroscopy, and IV characteristics. The XRD results revealed the evolution of a dominant kesterite phase of CZTS at 450&#xa0;℃ which was further verified by the Raman spectroscopy. Further, structural parameters such as crystallite size, strain and dislocation density were calculated from the XRD result. The EDS analysis of both the sputtering target and the film deposited at 450&#xa0;°C revealed closely matching elemental compositions. The electrical resistivity and bandgap of the CZTS film grown at 450&#xa0;℃ substrate temperature were 0.16 Ωcm and 1.56&#xa0;eV, respectively. The phase-pure film also shows p-type conductivity, with a carrier concentration of 5.2 × 10<sup>17</sup>&#xa0;cm<sup>−3</sup>. The film showed a favorable white light sensitivity (205%), which is suitable for the fabrication of solar cell applications. This study established the optimum substrate temperature required for the growth of the kesterite phase in a single-step deposition process.</p>

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Substrate temperature-driven growth of phase-pure Cu2ZnSnS4 thin films by RF magnetron sputtering using compound target for solar cell applications

  • 期刊论文

  • 发表日期：

    2026年3月30日

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  • Kaushlendra Pandey,
  • Jyoti Jangra,
  • Indu Gupta,
  • Bhaskar Chandra Mohanty,
  • Ramalinga Viswanathan Mangalaraja,
  • Arunachalam Arulraj

摘要

Cu2ZnSnS4 (CZTS) has been recognized as a very promising absorber material for the inorganic thin-film solar cells owing to its suitable optical and electrical properties. Further, its earth-abundant constituents offer potential fabrication of a low-cost solar cell. Among different deposition techniques, sputtering is well recognized as a suitable route for the scalable production of thin films in the optoelectronics technology. In this work, we report the growth of CZTS thin films by radio frequency (RF) magnetron sputtering using a compound target which was sintered at 300 ℃. The films were deposited on soda-lime glass (SLG) substrates at different temperatures in the range of 300–500 ℃. The role of substrate temperature in the CZTS phase growth and its influence on various properties of the deposited thin films were studied by using XRD, Raman, FESEM, EDS, UV–Vis spectroscopy, and IV characteristics. The XRD results revealed the evolution of a dominant kesterite phase of CZTS at 450 ℃ which was further verified by the Raman spectroscopy. Further, structural parameters such as crystallite size, strain and dislocation density were calculated from the XRD result. The EDS analysis of both the sputtering target and the film deposited at 450 °C revealed closely matching elemental compositions. The electrical resistivity and bandgap of the CZTS film grown at 450 ℃ substrate temperature were 0.16 Ωcm and 1.56 eV, respectively. The phase-pure film also shows p-type conductivity, with a carrier concentration of 5.2 × 1017 cm−3. The film showed a favorable white light sensitivity (205%), which is suitable for the fabrication of solar cell applications. This study established the optimum substrate temperature required for the growth of the kesterite phase in a single-step deposition process.