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<p>The article discusses the preparation and characterization of Hf<sub>0.75</sub>Zr<sub>0.25</sub>O<sub>2</sub> thin films by pulsed laser deposition as a CMOS-compatible material for non-volatile memories. Films with a thickness of 150&#xa0;nm were deposited on platinized silicon substrates at 550&#xa0;°C with post-annealing at 600&#xa0;°C. X-ray diffraction revealed mixed monoclinic-tetragonal phases. Electrical characterization was done on Pt/Hf<sub>0.75</sub>Zr<sub>0.25</sub>O<sub>2</sub>/Pt/Si, metal–insulator-metal capacitors. Dielectric constant ranged 125–240 across 100&#xa0;Hz-1&#xa0;MHz with loss tangent minimum 0.10–0.11 at 10&#xa0;kHz. Leakage current density was ~ 10<sup>–7</sup> A/cm<sup>2</sup> at -7&#xa0;V, with space-charge-limited current as the dominant conduction mechanism. The structure exhibited consistent unipolar resistive switching with a switchable polarization of ~ 10 μC/cm<sup>2</sup> and a coercive field in the range of 267–400&#xa0;kV/cm, demonstrating potential applications in resistive memory devices.</p>

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Electrical properties of pulsed laser-deposited Hf0.75Zr0.25O2 thin films on platinized silicon substrates

  • 期刊论文

  • 发表日期：

    2026年3月16日

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  • Urvashi Sharma,
  • Ashok Kumar,
  • Reji Thomas

摘要

The article discusses the preparation and characterization of Hf0.75Zr0.25O2 thin films by pulsed laser deposition as a CMOS-compatible material for non-volatile memories. Films with a thickness of 150 nm were deposited on platinized silicon substrates at 550 °C with post-annealing at 600 °C. X-ray diffraction revealed mixed monoclinic-tetragonal phases. Electrical characterization was done on Pt/Hf0.75Zr0.25O2/Pt/Si, metal–insulator-metal capacitors. Dielectric constant ranged 125–240 across 100 Hz-1 MHz with loss tangent minimum 0.10–0.11 at 10 kHz. Leakage current density was ~ 10–7 A/cm2 at -7 V, with space-charge-limited current as the dominant conduction mechanism. The structure exhibited consistent unipolar resistive switching with a switchable polarization of ~ 10 μC/cm2 and a coercive field in the range of 267–400 kV/cm, demonstrating potential applications in resistive memory devices.