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<p>Zinc oxide is a widely studied wide-bandgap semiconductor with various functional properties. This makes it appealing for optoelectronic and sensing applications. Its chemical stability, low-cost processing, and adjustable electronic behaviour allow for practical device integration. In this work, undoped and Ni-, Co-, and Sn-doped ZnO thin films (2% and 5%) were created on glass substrates using low temperature Successive Ionic Layer Adsorption and Reaction (SILAR) method. Structural analysis confirmed the presence of the hexagonal wurtzite ZnO phase with a strong (002) preferred orientation for all films. A systematic shift in diffraction peaks and changes in crystallite size was observed based on the type of dopant used. Ni caused lattice contraction and refined crystallites. Co resulted in minimal structural distortion, while Sn led to moderate lattice changes while maintaining phase stability. Field-emission scanning electron microscopy (FESEM) showed that the morphology evolved based on the dopant. Pure ZnO displayed well-defined nanoflower structures. Ni doping resulted in grain refinement and agglomeration. Co incorporation caused slight surface modifications, and Sn doping improved grain packing at higher concentrations. Cross-sectional FESEM analysis confirmed that the films possess uniform thickness in the range of 320–420&#xa0;nm. Optical studies indicated significant changes in absorption behaviour. The optical bandgap decreased from 3.20&#xa0;eV (for pure ZnO) to 2.75&#xa0;eV (for 5% Ni), 2.50&#xa0;eV (for 5% Co), and 2.30&#xa0;eV (for 5% Sn). Current–voltage (I-V) measurements showed that all doped films had increased electrical conductivity, particularly the Ni-ZnO films, because of a higher carrier concentration and defect-mediated transport. Overall, the results indicate that controlling the addition of Ni, Co, and Sn through the SILAR process allows for systematic tuning of the structural, morphological, optical, and electrical properties of ZnO thin films. This highlights their potential for use in transparent optoelectronic devices, high-responsivity photodetectors, and energy-related applications.</p>

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SILAR-synthesized Ni, Co, and Sn-modified ZnO thin films for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2026年3月12日

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  • M Aswathy,
  • Sundararaman Gopalan

摘要

Zinc oxide is a widely studied wide-bandgap semiconductor with various functional properties. This makes it appealing for optoelectronic and sensing applications. Its chemical stability, low-cost processing, and adjustable electronic behaviour allow for practical device integration. In this work, undoped and Ni-, Co-, and Sn-doped ZnO thin films (2% and 5%) were created on glass substrates using low temperature Successive Ionic Layer Adsorption and Reaction (SILAR) method. Structural analysis confirmed the presence of the hexagonal wurtzite ZnO phase with a strong (002) preferred orientation for all films. A systematic shift in diffraction peaks and changes in crystallite size was observed based on the type of dopant used. Ni caused lattice contraction and refined crystallites. Co resulted in minimal structural distortion, while Sn led to moderate lattice changes while maintaining phase stability. Field-emission scanning electron microscopy (FESEM) showed that the morphology evolved based on the dopant. Pure ZnO displayed well-defined nanoflower structures. Ni doping resulted in grain refinement and agglomeration. Co incorporation caused slight surface modifications, and Sn doping improved grain packing at higher concentrations. Cross-sectional FESEM analysis confirmed that the films possess uniform thickness in the range of 320–420 nm. Optical studies indicated significant changes in absorption behaviour. The optical bandgap decreased from 3.20 eV (for pure ZnO) to 2.75 eV (for 5% Ni), 2.50 eV (for 5% Co), and 2.30 eV (for 5% Sn). Current–voltage (I-V) measurements showed that all doped films had increased electrical conductivity, particularly the Ni-ZnO films, because of a higher carrier concentration and defect-mediated transport. Overall, the results indicate that controlling the addition of Ni, Co, and Sn through the SILAR process allows for systematic tuning of the structural, morphological, optical, and electrical properties of ZnO thin films. This highlights their potential for use in transparent optoelectronic devices, high-responsivity photodetectors, and energy-related applications.