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<p>In this research, thin-film p–n junction photodiodes were fabricated using CuS as the <i>p</i>-type layer combined with different <i>n</i>-type substrates (ATO, FTO, and ZnO) through spray pyrolysis, and their optoelectronic properties were systematically examined. Comprehensive structural, surface, optical, and electrical analyses confirmed that the p-CuS/n-ATO device delivered the best overall performance among the tested configurations. The diode achieved a maximum photosensitivity of 3.71 × 10<sup>4</sup>%, responsivity of 92.92 mAW<sup>−1</sup>, quantum efficiency of 48.09%, and specific detectivity of 1.9 × 10<sup>11</sup> Jones at 1&#xa0;V bias. These values are considerably higher than those reported for other metal-sulfide-based photodetectors. The superior behavior is mainly attributed to favorable band alignment, reduced carrier recombination, and efficient charge transport across the CuS/ATO interface. The findings demonstrate that ATO functions as a highly effective n-type electrode, ensuring stable junction formation and low-noise operation. Overall, the study highlights the promise of CuS/ATO heterostructures for high-sensitivity photodetection and scalable optoelectronic device development.</p>

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Comparative optoelectronic evaluation of CuS-based thin-film p–n junction photodiodes on ATO, FTO, and ZnO substrates fabricated via spray pyrolysis

  • 期刊论文

  • 发表日期：

    2026年4月7日

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  • Seyed Reza Jebraily,
  • S. M. Rozati

摘要

In this research, thin-film p–n junction photodiodes were fabricated using CuS as the p-type layer combined with different n-type substrates (ATO, FTO, and ZnO) through spray pyrolysis, and their optoelectronic properties were systematically examined. Comprehensive structural, surface, optical, and electrical analyses confirmed that the p-CuS/n-ATO device delivered the best overall performance among the tested configurations. The diode achieved a maximum photosensitivity of 3.71 × 104%, responsivity of 92.92 mAW−1, quantum efficiency of 48.09%, and specific detectivity of 1.9 × 1011 Jones at 1 V bias. These values are considerably higher than those reported for other metal-sulfide-based photodetectors. The superior behavior is mainly attributed to favorable band alignment, reduced carrier recombination, and efficient charge transport across the CuS/ATO interface. The findings demonstrate that ATO functions as a highly effective n-type electrode, ensuring stable junction formation and low-noise operation. Overall, the study highlights the promise of CuS/ATO heterostructures for high-sensitivity photodetection and scalable optoelectronic device development.