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<p>Improvement of the growth mechanism of nanostructured CdS thin films prepared by the chemical bath deposition (CBD) route has drawn attention to obtain high-quality films that can be used for advanced technical and industrial applications. In this study, the influence of a CW green diode laser illumination during chemical bath deposition on the structural and optical properties of cadmium sulfide (CdS) thin films deposited on porous silicon was examined. The X-ray diffraction studies reveal that using a laser during the deposition of CdS film leads to the formation of nanocrystalline CdS with a cubic structure. The stoichiometry of the CdS film is improved with laser assistance. The value of the optical energy gap of the CdS film, as determined from UV–Vis absorption, increases from 2.54 to 2.66&#xa0;eV when laser illumination is applied. The scanning electron microscope result shows that the agglomeration of the CdS particles decreases when laser illumination is applied, and the CdS particles are well embedded inside the pores of the porous silicon (PSi). The figures of merit of the CdS-embedded PSi/c-Si photodetectors are significantly enhanced after using laser illumination. The responsivity of the photodetector increases from 5 to 8 A/W at 600&#xa0;nm when the laser beam illumination applied during deposition is adjusted. The rise/fall time and ON/OFF current ratio are found to be improved for the photodetector prepared with laser illumination.</p>

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Preparation of high-performance nanostructured CdS/porous Si photodetector by laser-assisted chemical bath deposition

  • 期刊论文

  • 发表日期：

    2026年3月5日

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  • Raghad H. Mohsin,
  • Hasan A. Hadi,
  • Raid A. Ismail

摘要

Improvement of the growth mechanism of nanostructured CdS thin films prepared by the chemical bath deposition (CBD) route has drawn attention to obtain high-quality films that can be used for advanced technical and industrial applications. In this study, the influence of a CW green diode laser illumination during chemical bath deposition on the structural and optical properties of cadmium sulfide (CdS) thin films deposited on porous silicon was examined. The X-ray diffraction studies reveal that using a laser during the deposition of CdS film leads to the formation of nanocrystalline CdS with a cubic structure. The stoichiometry of the CdS film is improved with laser assistance. The value of the optical energy gap of the CdS film, as determined from UV–Vis absorption, increases from 2.54 to 2.66 eV when laser illumination is applied. The scanning electron microscope result shows that the agglomeration of the CdS particles decreases when laser illumination is applied, and the CdS particles are well embedded inside the pores of the porous silicon (PSi). The figures of merit of the CdS-embedded PSi/c-Si photodetectors are significantly enhanced after using laser illumination. The responsivity of the photodetector increases from 5 to 8 A/W at 600 nm when the laser beam illumination applied during deposition is adjusted. The rise/fall time and ON/OFF current ratio are found to be improved for the photodetector prepared with laser illumination.