Scholarlink

<p>Threshold switching memristors (TSMs) are crucial components in emulating neuronal functions in neuromorphic computing. However, the inherent randomness of localized resistive switching behavior in current TSM devices, coupled with excessive Ag<sup>+</sup> accumulation in the dielectric layer, leads to performance variability and limited endurance, significantly impeding their stability and reliability for practical applications. To address these challenges, we fabricated a Pt/HfO<sub><i>x</i></sub>:Ag/Pt NIs/Pt TSM device utilizing a homogeneous nanoscale mixture of HfO<sub><i>x</i></sub> with Ag achieved via co-sputtering. By meticulously controlling the Ag doping concentration in HfO<sub><i>x</i></sub>:Ag films through co-sputtering, the formation of stable Ag CFs was suppressed, thereby extending the volatile device endurance. Simultaneously, the uniform Ag distribution promoted consistent ionization and reduced Ag⁺ migration distance, leading to electroforming-free operation and ultra-low switching voltages. The electric field concentration effect of Pt nano-islands (Pt NIs) localizes Ag conductive filament growth, which minimizes parameter variability and contributes to electroforming-free operation, ultra-low switching voltages, and improved device endurance. Pt/HfO<sub><i>x</i></sub>:Ag/Pt NIs/Pt TSM exhibits several key advantages: electroforming-free, prolonged endurance, the bidirectional threshold switching behavior, low threshold voltage (&lt; 0.02&#xa0;V), and low performance variability. This work provides innovative strategies for developing high-performance TSM devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhanced performance of HfOx threshold switching memristors via Ag-doping and Pt nano-islands

  • 期刊论文

  • 发表日期：

    2026年3月3日

查看全文
  • Yu Wang,
  • Fanlin Long,
  • Ting Jiang,
  • Yichuan Zhang,
  • Huaxian Liang,
  • Baolin Zhang

摘要

Threshold switching memristors (TSMs) are crucial components in emulating neuronal functions in neuromorphic computing. However, the inherent randomness of localized resistive switching behavior in current TSM devices, coupled with excessive Ag+ accumulation in the dielectric layer, leads to performance variability and limited endurance, significantly impeding their stability and reliability for practical applications. To address these challenges, we fabricated a Pt/HfOx:Ag/Pt NIs/Pt TSM device utilizing a homogeneous nanoscale mixture of HfOx with Ag achieved via co-sputtering. By meticulously controlling the Ag doping concentration in HfOx:Ag films through co-sputtering, the formation of stable Ag CFs was suppressed, thereby extending the volatile device endurance. Simultaneously, the uniform Ag distribution promoted consistent ionization and reduced Ag⁺ migration distance, leading to electroforming-free operation and ultra-low switching voltages. The electric field concentration effect of Pt nano-islands (Pt NIs) localizes Ag conductive filament growth, which minimizes parameter variability and contributes to electroforming-free operation, ultra-low switching voltages, and improved device endurance. Pt/HfOx:Ag/Pt NIs/Pt TSM exhibits several key advantages: electroforming-free, prolonged endurance, the bidirectional threshold switching behavior, low threshold voltage (< 0.02 V), and low performance variability. This work provides innovative strategies for developing high-performance TSM devices.