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<p>Nitrogen dioxide (NO<sub>2</sub>), a hazardous air pollutant emitted from industrial and vehicular sources, requires sensitive and reliable sensing technologies for environmental and industrial monitoring. In this work, Indium-doped ZnO nanorods were synthesized via a green co-precipitation approach using <i>Azadirachta indica</i> (Neem) leaf extract and systematically investigated for NO<sub>2</sub> gas-sensing applications. XRD confirmed the formation of a polycrystalline hexagonal wurtzite ZnO structure without secondary impurity phases, while FESEM and HRTEM analyses revealed uniformly distributed nanorods with high crystallinity. Optical studies demonstrated a noticeable widening of the bandgap upon indium incorporation, attributed to the Burstein–Moss effect arising from increased carrier concentration. Electrochemical band structure analysis further corroborated the upward shift of the conduction band edge in In-doped ZnO, confirming effective electronic structure modulation. Gas-sensing investigations revealed that the Zn#2In sensor exhibited the highest response of 7.9 toward 20&#xa0;ppm NO<sub>2</sub> at an optimal operating temperature of 180&#xa0;°C, along with excellent selectivity, repeatability, and fast response–recovery characteristics. The sensor showed a linear response in the 1–20&#xa0;ppm concentration range and stable performance over multiple cycles. The enhanced sensing performance is attributed to Burstein–Moss-induced carrier concentration modulation combined with increased surface defect density, which optimizes surface depletion layer width and NO<sub>2</sub> adsorption kinetics. These results highlight green-synthesized Zn#2In nanorods as a promising semiconductor material for reliable and efficient NO<sub>2</sub> gas-sensing applications.</p>

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Burstein–Moss effect-driven bandgap engineering in green-synthesized In-doped ZnO nanorods for enhanced NO2 gas sensing

  • 期刊论文

  • 发表日期：

    2026年3月3日

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  • Vishal S. Kamble,
  • Balasaheb D. Aghav,
  • Satyajit S. Kamble,
  • Kaustubh A. Mundhe,
  • Suyog S. Mane,
  • Prajakta M. Mhatre,
  • Lahu A. Ghule,
  • Jyotsna S. Vajekar,
  • Digambar K. Patil,
  • Mahesh M. Dhaigude

摘要

Nitrogen dioxide (NO2), a hazardous air pollutant emitted from industrial and vehicular sources, requires sensitive and reliable sensing technologies for environmental and industrial monitoring. In this work, Indium-doped ZnO nanorods were synthesized via a green co-precipitation approach using Azadirachta indica (Neem) leaf extract and systematically investigated for NO2 gas-sensing applications. XRD confirmed the formation of a polycrystalline hexagonal wurtzite ZnO structure without secondary impurity phases, while FESEM and HRTEM analyses revealed uniformly distributed nanorods with high crystallinity. Optical studies demonstrated a noticeable widening of the bandgap upon indium incorporation, attributed to the Burstein–Moss effect arising from increased carrier concentration. Electrochemical band structure analysis further corroborated the upward shift of the conduction band edge in In-doped ZnO, confirming effective electronic structure modulation. Gas-sensing investigations revealed that the Zn#2In sensor exhibited the highest response of 7.9 toward 20 ppm NO2 at an optimal operating temperature of 180 °C, along with excellent selectivity, repeatability, and fast response–recovery characteristics. The sensor showed a linear response in the 1–20 ppm concentration range and stable performance over multiple cycles. The enhanced sensing performance is attributed to Burstein–Moss-induced carrier concentration modulation combined with increased surface defect density, which optimizes surface depletion layer width and NO2 adsorption kinetics. These results highlight green-synthesized Zn#2In nanorods as a promising semiconductor material for reliable and efficient NO2 gas-sensing applications.