<p>Spintronic technologies utilize the spin of charge carriers as an additional information variable, providing new opportunities for electronic devices with improved performance and reduced power consumption. Metal oxide nanostructures have emerged as particularly attractive candidates in this field owing to their flexible crystal chemistry, defect-rich nature, and compatibility with cost-effective, large-area synthesis techniques. This review presents a critical overview of sol–gel chemistry as a versatile platform for the design and fabrication of oxide nanomaterials tailored for spintronic applications. The ability of sol–gel processing to achieve precise compositional tuning, uniform dopant distribution, and controlled defect and grain boundary formation is discussed across a wide range of oxide systems, including transition-metal-doped ZnO and TiO₂, spinel ferrites, manganites, and other emerging oxide materials. Key spin-dependent phenomena such as room-temperature magnetic ordering, spin polarization, and magnetotransport behavior are analyzed in relation to defect-assisted exchange mechanisms, bound magnetic polaron models, and transport dominated by interfacial and grain boundary effects. In addition to highlighting recent experimental progress, this review examines ongoing challenges associated with sol–gel-derived oxide spintronics, including issues of reproducibility, unintended secondary phases, limitations in magnetic characterization, and the long-term stability of defect-induced magnetic states. Finally, future perspectives are outlined, emphasizing rational defect engineering, interface and heterostructure design, combined fabrication approaches, and data-driven strategies for accelerating materials optimization.</p>