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<p>Achieving high mechanical quality factor (Q<sub>m</sub>) and large piezoelectric coefficient (d<sub>33</sub>) concurrently is critical for high-power piezoelectric ceramics but remains challenging due to their inherent trade-off. In this study, a synergistic strategy combining phase-boundary and defect engineering via manganese doped tetragonal (T)-rich morphotropic phase boundary (MPB) composition based on a modified Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-Pb(Zr,Ti)O<sub>3</sub> (PMN-PZT) system is employed. In this modified PMN-PZT system, ultrahigh d<sub>33</sub> of ~ 641 pC/N was achieved in the T-rich MPB compositions. Subsequent incorporation of low-valence Mn ions can form the defect dipoles that strongly interact with the spontaneous polarization of T phase, leading to the suppression of the domain wall motion. This induces drastic enhancement of Q<sub>m</sub>, while maintaining the relatively large d<sub>33</sub>. Consequently, the optimal electrical properties of Q<sub>m</sub> = 890, d<sub>33</sub> = 460 pC/N, k<sub>p</sub> = 0.56, tan δ = 0.57% can be achieved.</p>

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High-power piezoelectric properties in manganese-modified PMN-PZT ceramics via defect and phase-boundary engineering

  • 期刊论文

  • 发表日期：

    2026年2月25日

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  • Zijia Xu,
  • Zide Yu,
  • Zeyu Sui,
  • Fangping Tan,
  • Xiaoyu Zhao,
  • Jian Fu

摘要

Achieving high mechanical quality factor (Qm) and large piezoelectric coefficient (d33) concurrently is critical for high-power piezoelectric ceramics but remains challenging due to their inherent trade-off. In this study, a synergistic strategy combining phase-boundary and defect engineering via manganese doped tetragonal (T)-rich morphotropic phase boundary (MPB) composition based on a modified Pb(Mg1/3Nb2/3)O3-Pb(Zr,Ti)O3 (PMN-PZT) system is employed. In this modified PMN-PZT system, ultrahigh d33 of ~ 641 pC/N was achieved in the T-rich MPB compositions. Subsequent incorporation of low-valence Mn ions can form the defect dipoles that strongly interact with the spontaneous polarization of T phase, leading to the suppression of the domain wall motion. This induces drastic enhancement of Qm, while maintaining the relatively large d33. Consequently, the optimal electrical properties of Qm = 890, d33 = 460 pC/N, kp = 0.56, tan δ = 0.57% can be achieved.