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<p>The structural engineering of Tin disulfide (SnS<sub>2</sub>) nanomaterials was achieved by transforming the materials into nanoflowers (NF) by the hydrothermal method. The structural, optical, and electrical properties of SnS<sub>2</sub> nanoflowers were studied. The X-ray diffraction (XRD) pattern confirmed the hexagonal structure of the synthesized material. The surface morphology shows a nanoflower-like structure of SnS<sub>2</sub>. Two distinct size distribution peaks, corresponding to ultrafine nanosheets and aggregated nanoflower particles was observed in the Dynamic Light Scattering (DLS) spectra. The specific surface area and the band gap of NF is found to be 187.74 m<sup>2</sup>/g and 2.11&#xa0;eV, respectively. The Cole–Cole plot of NF materials can be modelled as an electrical resistance–capacitance (RC) circuit. The bulk resistance decreased with temperature, confirming the Negative Temperature Coefficient of Resistance (NTCR) behaviors of the semiconductor. The ITO|SnS₂|Al device exhibits robust synaptic plasticity and high neuromorphic classification accuracy, validating SnS₂ nanoflowers as a promising material for artificial synapses. The device exhibited stable bipolar current–voltage (I-V) characteristics with reproducible switching over 100 consecutive cycles, confirming its endurance and reliability. In addition to electrical synaptic behaviours, the devices also displayed synaptic responses when electrical pulses were applied, highlighting their neuromorphic application. Furthermore, classification tasks using Modified National Institute of Standards and Technology (MNIST) and Extended Modified National Institute of Standards and Technology (EMNIST) datasets was achieved recognition accuracies of ~ 96.67 and ~ 88.01%, respectively.</p>

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Structural engineering of SnS2 nanoflowers for neuromorphic applications

  • 期刊论文

  • 发表日期：

    2026年2月6日

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  • Megha Rana,
  • Riya Malik,
  • Mandvi Chauhan,
  • Mayank Sharma,
  • Ruchita Joshi,
  • Omwati Rana,
  • Suraj P. Khanna,
  • Ritu Srivastava,
  • C. K. Suman

摘要

The structural engineering of Tin disulfide (SnS2) nanomaterials was achieved by transforming the materials into nanoflowers (NF) by the hydrothermal method. The structural, optical, and electrical properties of SnS2 nanoflowers were studied. The X-ray diffraction (XRD) pattern confirmed the hexagonal structure of the synthesized material. The surface morphology shows a nanoflower-like structure of SnS2. Two distinct size distribution peaks, corresponding to ultrafine nanosheets and aggregated nanoflower particles was observed in the Dynamic Light Scattering (DLS) spectra. The specific surface area and the band gap of NF is found to be 187.74 m2/g and 2.11 eV, respectively. The Cole–Cole plot of NF materials can be modelled as an electrical resistance–capacitance (RC) circuit. The bulk resistance decreased with temperature, confirming the Negative Temperature Coefficient of Resistance (NTCR) behaviors of the semiconductor. The ITO|SnS₂|Al device exhibits robust synaptic plasticity and high neuromorphic classification accuracy, validating SnS₂ nanoflowers as a promising material for artificial synapses. The device exhibited stable bipolar current–voltage (I-V) characteristics with reproducible switching over 100 consecutive cycles, confirming its endurance and reliability. In addition to electrical synaptic behaviours, the devices also displayed synaptic responses when electrical pulses were applied, highlighting their neuromorphic application. Furthermore, classification tasks using Modified National Institute of Standards and Technology (MNIST) and Extended Modified National Institute of Standards and Technology (EMNIST) datasets was achieved recognition accuracies of ~ 96.67 and ~ 88.01%, respectively.