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<p>The Zn<sub>1-x</sub> Co<sub>x</sub> O (<i>x</i> = 0, 1.5, 2, 2.5 wt%) thin films were synthesized via chemical spray pyrolysis under a constant substrate temperature of 350&#xa0;°C. The study aimed to investigate the influence of Co doping on the structural, optical, and magnetic properties of ZnO thin films for potential spintronic applications. Structural analysis using X-ray diffraction (XRD) confirmed the formation of hexagonal wurtzite phase with a preferred (002) orientation, and a systematic peak shift toward higher angles with lattice compression indicated successful Co incorporation. Compared to other doping levels, the 2 wt% Co: ZnO sample showed improved crystallinity, with a larger crystallite size of about 55&#xa0;nm. Energy-dispersive X-ray spectroscopy (EDX) verified the elemental composition, confirming the presence of Zn, O, and Co. The optical studies demonstrated bandgap widening from 3.14&#xa0;eV (undoped) to 3.6&#xa0;eV (2 wt% Co: ZnO) due to the Burstein–Moss effect, accompanied by a decrease in Urbach energy (0.2272&#xa0;eV), suggesting improved structural order. Photoluminescence (PL) spectra exhibited both near-band-edge and deep-level emissions, with intensity quenching upon doping. Among the prepared samples, the 2 wt% Co: ZnO thin film was chosen for detailed magnetic investigation owing to its optimized structural and optical characteristics. VSM measurements confirmed intrinsic room-temperature ferromagnetism in both the undoped and optimally doped films. These findings suggest the suitability of the fabricated thin films for spintronic device integration.</p>

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Tailoring structural, optical, and magnetic properties of ZnO thin films via cobalt doping for spintronic device applications: a chemical spray pyrolysis approach

  • 期刊论文

  • 发表日期：

    2026年2月7日

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  • P. Vidhya,
  • E. Ashlyn Kirupa

摘要

The Zn1-x Cox O (x = 0, 1.5, 2, 2.5 wt%) thin films were synthesized via chemical spray pyrolysis under a constant substrate temperature of 350 °C. The study aimed to investigate the influence of Co doping on the structural, optical, and magnetic properties of ZnO thin films for potential spintronic applications. Structural analysis using X-ray diffraction (XRD) confirmed the formation of hexagonal wurtzite phase with a preferred (002) orientation, and a systematic peak shift toward higher angles with lattice compression indicated successful Co incorporation. Compared to other doping levels, the 2 wt% Co: ZnO sample showed improved crystallinity, with a larger crystallite size of about 55 nm. Energy-dispersive X-ray spectroscopy (EDX) verified the elemental composition, confirming the presence of Zn, O, and Co. The optical studies demonstrated bandgap widening from 3.14 eV (undoped) to 3.6 eV (2 wt% Co: ZnO) due to the Burstein–Moss effect, accompanied by a decrease in Urbach energy (0.2272 eV), suggesting improved structural order. Photoluminescence (PL) spectra exhibited both near-band-edge and deep-level emissions, with intensity quenching upon doping. Among the prepared samples, the 2 wt% Co: ZnO thin film was chosen for detailed magnetic investigation owing to its optimized structural and optical characteristics. VSM measurements confirmed intrinsic room-temperature ferromagnetism in both the undoped and optimally doped films. These findings suggest the suitability of the fabricated thin films for spintronic device integration.