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<p>We have developed a p-Si(100)/La₀.₇Sr₀.₃MnO₃(LSMO)/P₃HT/CuPc/Au heterostructure, which demonstrates a resistive and capacitive electrical memory switching effect along with a broad band photodetection in a single platform. The device exhibits a 155% ratio of high-resistive to low-resistive states, can last through ten cycles with just 11% resistance strain, and has a strong resistive cum capacitive switching response that was confirmed by A.C. impedance fitting using a dual-RC equivalent circuit. The device also exhibits magnetic field tunability, optical tunability, and magneto-optical modulation [167 times increase] of electrical hysteresis width (∆I). Charge-trapping and detrapping are considered to be the main mechanisms behind device operation.&#xa0;Magnetic field-induced changes, light-induced alterations, and the combined effects of light and magnetic fields on induced electric polarisation may be considered as the key factors behind the modification of ∆I under magnetic fields and light. Notably, the device also features broadband photodetection capability, spanning the range from 410 to 1400&#xa0;nm. The photoresponse peaks at 410&#xa0;nm, 532&#xa0;nm, and 660&#xa0;nm are due to the absorption properties of CuPc and P3HT. These results provide us with essential information about how light, magnetic fields, and charge interact at the boundaries between inorganic and organic materials. The innovative integration of resistive cum capacitive memory switching, broadband optical sensing, and magneto-optical modulation within a single heterostructure may facilitate the development of low-energy, multifunctional optospintronic systems. This study may also point the way to develop better AI-driven memory, sensing, and Internet of things (IoT) technologies.</p>

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Magneto-optical tunability of electrical irreversibility and broadband photodetection in hybrid inorganic–organic p-Si (100)/La0.7Sr0.3MnO3/P3HT/CuPc/Au heterostructure

  • 期刊论文

  • 发表日期：

    2026年2月9日

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  • Md Minhaj Ali,
  • Nitish Ghosh,
  • P. Dey

摘要

We have developed a p-Si(100)/La₀.₇Sr₀.₃MnO₃(LSMO)/P₃HT/CuPc/Au heterostructure, which demonstrates a resistive and capacitive electrical memory switching effect along with a broad band photodetection in a single platform. The device exhibits a 155% ratio of high-resistive to low-resistive states, can last through ten cycles with just 11% resistance strain, and has a strong resistive cum capacitive switching response that was confirmed by A.C. impedance fitting using a dual-RC equivalent circuit. The device also exhibits magnetic field tunability, optical tunability, and magneto-optical modulation [167 times increase] of electrical hysteresis width (∆I). Charge-trapping and detrapping are considered to be the main mechanisms behind device operation. Magnetic field-induced changes, light-induced alterations, and the combined effects of light and magnetic fields on induced electric polarisation may be considered as the key factors behind the modification of ∆I under magnetic fields and light. Notably, the device also features broadband photodetection capability, spanning the range from 410 to 1400 nm. The photoresponse peaks at 410 nm, 532 nm, and 660 nm are due to the absorption properties of CuPc and P3HT. These results provide us with essential information about how light, magnetic fields, and charge interact at the boundaries between inorganic and organic materials. The innovative integration of resistive cum capacitive memory switching, broadband optical sensing, and magneto-optical modulation within a single heterostructure may facilitate the development of low-energy, multifunctional optospintronic systems. This study may also point the way to develop better AI-driven memory, sensing, and Internet of things (IoT) technologies.