Scholarlink

<p>High specific contact resistivity (ρ<sub>c</sub>) and anneal-induced parasitic resistance (R<sub>parasitic</sub>) are major challenges for downscaled DRAM peripheral transistors. Here, the effects of ultra-thin Ti and TiN thickness on the ρ<sub>c</sub> of TiSi<sub>x</sub>/n⁺-Si ohmic contacts and on their thermal stability are systematically investigated as a function of annealing temperature and duration. The results show that ρ<sub>c</sub> is strongly dependent on Ti thickness, whereas it is only weakly affected by TiN thickness. A Ti/TiN bilayer of 50 Å/50 Å achieves ρ<sub>c</sub> on the order of 10⁻⁸ Ω·cm<sup>2</sup> after a DRAM-relevant anneal of 750 °C for 30 min. Oxygen gettering and redistribution in the Ti layer are discussed as the primary mechanism responsible for the observed trends.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Impact of ultra-thin titanium film thickness on titanium silicides: specific contact resistivity and thermal stability

  • 期刊论文

  • 发表日期：

    2026年2月6日

查看全文
  • Haisu Gao,
  • Jing Xu,
  • Xu Chen,
  • Chang Liu,
  • Jinbiao Liu,
  • Xianglie Sun,
  • Jianfeng Gao,
  • Shujuan Mao,
  • Guilei Wang,
  • Chao Zhao,
  • Jun Luo

摘要

High specific contact resistivity (ρc) and anneal-induced parasitic resistance (Rparasitic) are major challenges for downscaled DRAM peripheral transistors. Here, the effects of ultra-thin Ti and TiN thickness on the ρc of TiSix/n⁺-Si ohmic contacts and on their thermal stability are systematically investigated as a function of annealing temperature and duration. The results show that ρc is strongly dependent on Ti thickness, whereas it is only weakly affected by TiN thickness. A Ti/TiN bilayer of 50 Å/50 Å achieves ρc on the order of 10⁻⁸ Ω·cm2 after a DRAM-relevant anneal of 750 °C for 30 min. Oxygen gettering and redistribution in the Ti layer are discussed as the primary mechanism responsible for the observed trends.