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<p>This study investigates the electrical performance of Schottky barrier diodes (SBDs) using a polyvinyl pyrrolidone (PVP) interlayer doped with microwave-synthesized Gd<sub>2</sub>O<sub>3</sub> nanostructures. Structural and optical properties of Gd<sub>2</sub>O<sub>3</sub> were characterized by XRD, UV–Vis, FE-SEM, and EDX analyses. Electrical parameters, including barrier height, ideality factor, leakage current, and resistance values, were extracted using thermionic emission theory, Cheung’s method, and the modified Norde function. The incorporation of the PVP:Gd<sub>2</sub>O<sub>3</sub> interfacial layer increased the zero-bias barrier height from 0.575 eV to 0.782 eV, enhanced the rectification ratio from 21 to 1440, and reduced the reverse leakage current by nearly four orders of magnitude compared to the conventional Au/n-Si SBD. Additionally, the ideality factor decreased from 6.86 to approximately 5.2, indicating improved interface quality. These results demonstrate that the PVP:Gd<sub>2</sub>O<sub>3</sub> nanocomposite is an effective interlayer material for improving the performance of SBDs in nano-electronic and optoelectronic applications.</p>

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The use of PVP polymer and PVP:Gd2O3 nanocomposite interlayers to improve electrical features of Schottky barrier diodes

  • 期刊论文

  • 发表日期：

    2026年1月27日

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  • Yashar Azizian-Kalandaragh,
  • Kübranur Tutku Ugip,
  • Süleyman Özçelik

摘要

This study investigates the electrical performance of Schottky barrier diodes (SBDs) using a polyvinyl pyrrolidone (PVP) interlayer doped with microwave-synthesized Gd2O3 nanostructures. Structural and optical properties of Gd2O3 were characterized by XRD, UV–Vis, FE-SEM, and EDX analyses. Electrical parameters, including barrier height, ideality factor, leakage current, and resistance values, were extracted using thermionic emission theory, Cheung’s method, and the modified Norde function. The incorporation of the PVP:Gd2O3 interfacial layer increased the zero-bias barrier height from 0.575 eV to 0.782 eV, enhanced the rectification ratio from 21 to 1440, and reduced the reverse leakage current by nearly four orders of magnitude compared to the conventional Au/n-Si SBD. Additionally, the ideality factor decreased from 6.86 to approximately 5.2, indicating improved interface quality. These results demonstrate that the PVP:Gd2O3 nanocomposite is an effective interlayer material for improving the performance of SBDs in nano-electronic and optoelectronic applications.